SSM40P03GJ Todos los transistores

 

SSM40P03GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM40P03GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 31.3 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 30 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 14 nC
   Tiempo de subida (tr): 56 nS
   Conductancia de drenaje-sustrato (Cd): 280 pF
   Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
   Paquete / Cubierta: TO-251

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SSM40P03GJ Datasheet (PDF)

 ..1. Size:281K  silicon standard
ssm40p03gh ssm40p03gj.pdf

SSM40P03GJ SSM40P03GJ

SSM40P03GH,JP-CHANNEL ENHANCEMENT-MODE POWER MOSFETDLow gate-charge BV -30VDSSSimple drive requirement R 28mDS(ON)GFast switching ID -30ASDescriptionGThe SSM40P03H is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The throug

 9.1. Size:375K  silicon standard
ssm40t03gp ssm40t03gs.pdf

SSM40P03GJ SSM40P03GJ

SSM40T03GP,SN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 30VDSimple drive requirement RDS(ON) 25mFast switching ID 28AGPb-free, RoHS compliant.SDESCRIPTIONGThe SSM40T03GS is in a TO-263 package, which is widely used forDScommercial and industrial surface-mount applications. This device is TO-263 (S)suitable for low-voltage applications such as DC

 9.2. Size:125K  silicon standard
ssm40n03p.pdf

SSM40P03GJ SSM40P03GJ

SSM40N03PN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate charge BVDSS 30VSimple drive requirement R 17mDS(ON)Fast switching ID 40AGDS TO-220DescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.SThe TO-220 package is widely preferred fo

 9.3. Size:295K  silicon standard
ssm40t03gh ssm40t03gj.pdf

SSM40P03GJ SSM40P03GJ

SSM40T03GH,JN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 30VDSimple drive requirement R 25mDS(ON)Fast switching ID 28AGPb-free; RoHS compliant.SDESCRIPTIONGThe SSM40T03GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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