SSM40T03GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM40T03GP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 62 nS
Cossⓘ - Capacitancia de salida: 145 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: TO-220
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SSM40T03GP Datasheet (PDF)
ssm40t03gp ssm40t03gs.pdf

SSM40T03GP,SN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 30VDSimple drive requirement RDS(ON) 25mFast switching ID 28AGPb-free, RoHS compliant.SDESCRIPTIONGThe SSM40T03GS is in a TO-263 package, which is widely used forDScommercial and industrial surface-mount applications. This device is TO-263 (S)suitable for low-voltage applications such as DC
ssm40t03gh ssm40t03gj.pdf

SSM40T03GH,JN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 30VDSimple drive requirement R 25mDS(ON)Fast switching ID 28AGPb-free; RoHS compliant.SDESCRIPTIONGThe SSM40T03GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC
ssm40p03gh ssm40p03gj.pdf

SSM40P03GH,JP-CHANNEL ENHANCEMENT-MODE POWER MOSFETDLow gate-charge BV -30VDSSSimple drive requirement R 28mDS(ON)GFast switching ID -30ASDescriptionGThe SSM40P03H is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The throug
ssm40n03p.pdf

SSM40N03PN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate charge BVDSS 30VSimple drive requirement R 17mDS(ON)Fast switching ID 40AGDS TO-220DescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.SThe TO-220 package is widely preferred fo
Otros transistores... SSM3K56FS , SSM3K56MFV , SSM3K59CTB , SSM3K72CTC , SSM40P03GH , SSM40P03GJ , SSM40T03GH , SSM40T03GJ , IRF3205 , SSM40T03GS , SSM4224M , SSM4226GM , SSM4228GM , SSM4232GM , SSM4407GM , SSM4409GEM , SSM4410M .
History: APT38F80B2 | IXFH28N60P3 | IRF4104PBF | 2SK2207 | 2SK1905 | 2SK1733 | NCE70N290I
History: APT38F80B2 | IXFH28N60P3 | IRF4104PBF | 2SK2207 | 2SK1905 | 2SK1733 | NCE70N290I



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