SSM4228GM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM4228GM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 6.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.4 nS

Cossⓘ - Capacitancia de salida: 310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: SO-8

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SSM4228GM datasheet

 ..1. Size:155K  silicon standard
 ssm4228gm.pdf pdf_icon

SSM4228GM

SSM4228M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance BVDSS 30V D2 D2 High Vgs rating D1 RDS(ON) 25m D1 Surface-mount package ID 6.8A G2 S2 G1 SO-8 S1 Description D2 D1 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 G1 ruggedized device design, ultra low on-resistance and cost-effectiveness.

 8.1. Size:133K  silicon standard
 ssm4224m.pdf pdf_icon

SSM4228GM

SSM4224M DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BVDSS 30V D2 D2 Simple drive requirement R 14m DS(ON) D1 D1 Dual N-MOSFET package ID 10A G2 S2 G1 SO-8 S1 Description Advanced power MOSFETs from Silicon Standard provide the D2 D1 designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effecti

 8.2. Size:142K  silicon standard
 ssm4226gm.pdf pdf_icon

SSM4228GM

SSM4226M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BVDSS 30V D2 D2 D1 Simple drive requirement R 18m DS(ON) D1 High V rating ID 8.2A GS G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 G1 ruggedized device design, ultra low on-resistance and cost

 9.1. Size:201K  silicon standard
 ssm4232gm.pdf pdf_icon

SSM4228GM

SSM4232GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 BVDSS 30V D2 Low On-Resistance D1 D1 RDS(ON) 22m Simple Drive Requirement ID 7.8A G2 Dual N MOSFET Package S2 G1 SO-8 S1 DESCRIPTION D2 D1 The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast G2 switching, ruggedized device design, ultra

MOSTRAR MÁS

Otros transistores... SSM40P03GH, SSM40P03GJ, SSM40T03GH, SSM40T03GJ, SSM40T03GP, SSM40T03GS, SSM4224M, SSM4226GM, IRF540N, SSM4232GM, SSM4407GM, SSM4409GEM, SSM4410M, SSM4423GM, SSM4424GM, SSM4426GM, SSM4435M