SSM4407GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM4407GM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 10.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 590 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET SSM4407GM

SSM4407GM Datasheet (PDF)

..1. Size:526K silicon standard
ssm4407gm.pdf

SSM4407GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM4407GM acheives fast switching performanceBVDSS -30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 14mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -10.7AD The SSM4407GM is supplied in a RoHS-compliantPb-free; RoHS

8.1. Size:183K silicon standard
ssm4409gem.pdf

SSM4409GEMP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DDDBVDSS -35VSimple Drive Requirement DRDS(ON) 7.5mLow On-resistance GFast Switching Characteristic ID -14.5ASSSRoHS Compliant SO-8DESCRIPTION DThe Advanced Power MOSFETs from Silicon Standard Corp. Gprovide the designer with the best combination of fast switching, ruggedized devic

9.1. Size:301K silicon standard
ssm4424gm.pdf

SSM4424GMN-channel Enhancement-mode Power MOSFETDSimple drive requirement BVDSS 30VLower gate charge RDS(ON) 9mGFast switching characteristics I 13.8ADSPb-free, RoHS compliant.DESCRIPTIONDDAdvanced Power MOSFETs from Silicon Standard provide theDDdesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effecti

9.2. Size:123K silicon standard
ssm4435m.pdf

SSM4435MP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -30VDDLow on-resistance D R 20mDS(ON)DFast switching ID -8AGSSSO-8 SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.SThe SO-8 package is widely

9.3. Size:223K silicon standard
ssm4423gm.pdf

SSM4423GMP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV -30VDSSDDLower gate charge R 15mDS(ON)DDFast switching characteristics ID -11AGSSSO-8SDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.

9.4. Size:526K silicon standard
ssm4426gm.pdf

SSM4426GMN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM4426GM acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 6.5mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 16AD The SSM4426GM is supplied in an RoHS-compliantPb-free; RoHS-c

9.5. Size:135K silicon standard
ssm4410m.pdf

SSM4410MN-CHANNEL ENHANCEMENT MODE POWER MOSFETLow on-resistance BV 30VDSSDDFast switching D RDS(ON) 13.5mD Simple drive requirement I 10ADGSSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. GSThe SO-8 package is wid

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