SSM4426GM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM4426GM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: SO-8

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SSM4426GM datasheet

 ..1. Size:526K  silicon standard
ssm4426gm.pdf pdf_icon

SSM4426GM

SSM4426GM N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM4426GM acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It RDS(ON) 6.5m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 16A D The SSM4426GM is supplied in an RoHS-compliant Pb-free; RoHS-c

 8.1. Size:301K  silicon standard
ssm4424gm.pdf pdf_icon

SSM4426GM

SSM4424GM N-channel Enhancement-mode Power MOSFET D Simple drive requirement BVDSS 30V Lower gate charge RDS(ON) 9m G Fast switching characteristics I 13.8A D S Pb-free, RoHS compliant. DESCRIPTION D D Advanced Power MOSFETs from Silicon Standard provide the D D designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti

 8.2. Size:223K  silicon standard
ssm4423gm.pdf pdf_icon

SSM4426GM

SSM4423GM P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BV -30V DSS D D Lower gate charge R 15m DS(ON) D D Fast switching characteristics ID -11A G S S SO-8 S Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness.

 9.1. Size:183K  silicon standard
ssm4409gem.pdf pdf_icon

SSM4426GM

SSM4409GEM P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D D D BVDSS -35V Simple Drive Requirement D RDS(ON) 7.5m Low On-resistance G Fast Switching Characteristic ID -14.5A S S S RoHS Compliant SO-8 DESCRIPTION D The Advanced Power MOSFETs from Silicon Standard Corp. G provide the designer with the best combination of fast switching, ruggedized devic

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