SSM4532GM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM4532GM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 145 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: SO-8

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SSM4532GM datasheet

 ..1. Size:288K  silicon standard
ssm4532gm.pdf pdf_icon

SSM4532GM

SSM4532GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 50m D1 D1 Low On-resistance ID 5A Fast Switching G2 P-CH BVDSS -30V S2 G1 SO-8 S1 RDS(ON) 70m DESCRIPTION ID -4A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching,

 9.1. Size:609K  secos
ssm452.pdf pdf_icon

SSM4532GM

SSM452 -6 A, -30V, RDS(ON) 55m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SSM452 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. FEATURES SOT-223 Simple Drive Requirement Lower On-resistanc

 9.2. Size:209K  silicon standard
ssm4500gm.pdf pdf_icon

SSM4532GM

SSM4500GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 20V D2 D2 Simple Drive Requirement RDS(ON) 30m D1 D1 Low On-resistance ID 6A Fast Switching G2 P-CH BVDSS -20V S2 G1 SO-8 S1 RDS(ON) 50m DESCRIPTION ID -5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, rug

 9.3. Size:305K  silicon standard
ssm4502gm.pdf pdf_icon

SSM4532GM

SSM4502GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 N-CH BVDSS 20V D2 Simple Drive Requirement D1 RDS(ON) 18m D1 Low Gate Charge ID 8.3A Fast Switching Performance G2 S2 P-CH BVDSS -20V G1 S1 SO-8 RDS(ON) 45m DESCRIPTION ID -5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switchin

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