SSM4575M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM4575M  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm

Encapsulados: SO-8

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SSM4575M datasheet

 ..1. Size:314K  silicon standard
ssm4575m.pdf pdf_icon

SSM4575M

SSM4575M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-Ch BV 60V D2 DSS D2 Low on-resistance D1 R 36m DS(ON) D1 Fast switching performance I 6A D G2 P-Ch BV -60V S2 DSS G1 SO-8 S1 RDS(ON) 72m Description ID -4.2A Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, D2 D1 rugge

 9.1. Size:609K  secos
ssm452.pdf pdf_icon

SSM4575M

SSM452 -6 A, -30V, RDS(ON) 55m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SSM452 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. FEATURES SOT-223 Simple Drive Requirement Lower On-resistanc

 9.2. Size:209K  silicon standard
ssm4500gm.pdf pdf_icon

SSM4575M

SSM4500GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 20V D2 D2 Simple Drive Requirement RDS(ON) 30m D1 D1 Low On-resistance ID 6A Fast Switching G2 P-CH BVDSS -20V S2 G1 SO-8 S1 RDS(ON) 50m DESCRIPTION ID -5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, rug

 9.3. Size:305K  silicon standard
ssm4502gm.pdf pdf_icon

SSM4575M

SSM4502GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 N-CH BVDSS 20V D2 Simple Drive Requirement D1 RDS(ON) 18m D1 Low Gate Charge ID 8.3A Fast Switching Performance G2 S2 P-CH BVDSS -20V G1 S1 SO-8 RDS(ON) 45m DESCRIPTION ID -5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switchin

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