SSM4816SM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM4816SM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: SO-8

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SSM4816SM datasheet

 ..1. Size:372K  silicon standard
 ssm4816sm.pdf pdf_icon

SSM4816SM

SSM4816SM DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE S1/D2 Simple drive requirement MOSFET-1 BVDSS 30V S1/D2 S1/D2 Suitable for DC-DC Converters R 22m DS(ON) D1 Fast switching performance ID 6.7A G2 MOSFET-2 BV 30V S2/A DSS S2/A SO-8 R 13m G1 DS(ON) Description ID 11.5A Advanced Power MOSFETs from Silicon Standard provide D1 the designer with the best combination of fa

 9.1. Size:283K  silicon standard
 ssm4800agm.pdf pdf_icon

SSM4816SM

SSM4800AGM N-Channel Enhancement Mode Power Mosfet PRODUCT SUMMARY D Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 18m D Fast Switching Characteristic ID 9.4A G RoHS Compliant S S SO-8 S DESCRIPTION D The Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on

 9.2. Size:155K  silicon standard
 ssm4835m.pdf pdf_icon

SSM4816SM

SSM4835M P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple drive requirement BVDSS -30V D D Low on-resistance D RDS(ON) 20m D Fast switching ID -8A G S S SO-8 S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S The SO-8 package is widely p

 9.3. Size:240K  silicon standard
 ssm4880agm.pdf pdf_icon

SSM4816SM

SSM4880AGM N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BVDSS 30V D D Fast switching, planar construction D RDS(ON) 9m D Simple drive requirement ID 13A G S S SO-8 S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G G S The

MOSTRAR MÁS

Otros transistores... SSM4502GM, SSM4507GM, SSM4509M, SSM4513M, SSM4532GM, SSM4565M, SSM4575M, SSM4800AGM, 7N65, SSM4835M, SSM4880AGM, SSM4920M, SSM4924GM, SSM4953M, SSM4955GM, SSM4957M, SSM5G02TU