SSM4920M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM4920M  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.5 nS

Cossⓘ - Capacitancia de salida: 260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: SO-8

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SSM4920M datasheet

 ..1. Size:153K  silicon standard
 ssm4920m.pdf pdf_icon

SSM4920M

SSM4920M N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple Drive Requirement BV 25V DSS D2 D2 Low On-resistance R 25m D1 DS(ON) D1 Fast Switching I 7A D G2 S2 G1 SO-8 S1 Description D2 D1 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 ruggedized device design, low on-resistance and cost- G1 effectiveness. S1 S2

 8.1. Size:310K  silicon standard
 ssm4924gm.pdf pdf_icon

SSM4920M

SSM4924GM Dual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 20V D2 D2 D1 Lower gate charge R RDS(ON) 35m D1 Fast switching characteristics I 6A ID G2 S2 Pb-free; RoHS compliant. G1 SO-8 S1 DESCRIPTION D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device desig

 9.1. Size:228K  silicon standard
 ssm4957m.pdf pdf_icon

SSM4920M

SSM4957(G)M DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV -30V DSS D2 D2 Lower gate charge R 24m DS(ON) D1 D1 Fast switching characteristics ID -7.7A G2 S2 G1 SO-8 S1 D2 D1 Description Advanced Power MOSFETs from Silicon Standard provide the G2 G1 designer with the best combination of fast switching, ruggedized device design, low on-resistan

 9.2. Size:515K  silicon standard
 ssm4955gm.pdf pdf_icon

SSM4920M

SSM4955GM Dual P-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM4955GM acheives fast switching performance BVDSS -20V with low gate charge without a complex drive circuit. It RDS(ON) 45m is suitable for low voltage applications such as battery management and general load-switching circuits. I -5.6A D The SSM4955GM is supplied in an RoHS-compliant Pb-fr

MOSTRAR MÁS

Otros transistores... SSM4513M, SSM4532GM, SSM4565M, SSM4575M, SSM4800AGM, SSM4816SM, SSM4835M, SSM4880AGM, IRF9540, SSM4924GM, SSM4953M, SSM4955GM, SSM4957M, SSM5G02TU, SSM5G04TU, IRF9530NPBF, IRF9530NSPBF