SSM4957M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM4957M  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 530 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: SO-8

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SSM4957M datasheet

 ..1. Size:228K  silicon standard
 ssm4957m.pdf pdf_icon

SSM4957M

SSM4957(G)M DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV -30V DSS D2 D2 Lower gate charge R 24m DS(ON) D1 D1 Fast switching characteristics ID -7.7A G2 S2 G1 SO-8 S1 D2 D1 Description Advanced Power MOSFETs from Silicon Standard provide the G2 G1 designer with the best combination of fast switching, ruggedized device design, low on-resistan

 8.1. Size:515K  silicon standard
 ssm4955gm.pdf pdf_icon

SSM4957M

SSM4955GM Dual P-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM4955GM acheives fast switching performance BVDSS -20V with low gate charge without a complex drive circuit. It RDS(ON) 45m is suitable for low voltage applications such as battery management and general load-switching circuits. I -5.6A D The SSM4955GM is supplied in an RoHS-compliant Pb-fr

 8.2. Size:109K  silicon standard
 ssm4953m.pdf pdf_icon

SSM4957M

SSM4953M P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BVDSS -30V D2 D2 Low on-resistance RDS(ON) 53m D1 D1 Fast switching I -5A D G2 S2 G1 SO-8 S1 D2 Description D1 MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, G2 G1 ruggedized device design, low on-resistance and cost- effectiveness. S2 S1

 9.1. Size:310K  silicon standard
 ssm4924gm.pdf pdf_icon

SSM4957M

SSM4924GM Dual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 20V D2 D2 D1 Lower gate charge R RDS(ON) 35m D1 Fast switching characteristics I 6A ID G2 S2 Pb-free; RoHS compliant. G1 SO-8 S1 DESCRIPTION D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device desig

MOSTRAR MÁS

Otros transistores... SSM4800AGM, SSM4816SM, SSM4835M, SSM4880AGM, SSM4920M, SSM4924GM, SSM4953M, SSM4955GM, 2N7002, SSM5G02TU, SSM5G04TU, IRF9530NPBF, IRF9530NSPBF, IRF9530PBF, IRF9530S, IRF9530SMD, IRF9530SPBF