IRF9610PBF Todos los transistores

 

IRF9610PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF9610PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO-220AB

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IRF9610PBF Datasheet (PDF)

 ..1. Size:1337K  international rectifier
irf9610pbf.pdf

IRF9610PBF
IRF9610PBF

PD- 95413IRF9610PbF Lead-Freewww.irf.com 106/15/04IRF9610PbF2 www.irf.comIRF9610PbFwww.irf.com 3IRF9610PbF4 www.irf.comIRF9610PbFwww.irf.com 5IRF9610PbF6 www.irf.comIRF9610PbFwww.irf.com 7IRF9610PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

 7.1. Size:447K  international rectifier
irf9610 irf9611 irf9612 irf9613.pdf

IRF9610PBF
IRF9610PBF

 7.2. Size:161K  international rectifier
irf9610.pdf

IRF9610PBF
IRF9610PBF

 7.3. Size:288K  international rectifier
irf9610s.pdf

IRF9610PBF
IRF9610PBF

PD - 95694IRF9610SPbF Lead-Free9/1/04Document Number: 91081 www.vishay.com1IRF9610SPbFDocument Number: 91081 www.vishay.com2IRF9610SPbFDocument Number: 91081 www.vishay.com3IRF9610SPbFDocument Number: 91081 www.vishay.com4IRF9610SPbFDocument Number: 91081 www.vishay.com5IRF9610SPbFDocument Number: 91081 www.vishay.com6IRF9610SPbFPeak Diode Re

 7.4. Size:286K  samsung
irf9610 irf9611.pdf

IRF9610PBF
IRF9610PBF

 7.5. Size:170K  vishay
irf9610s sihf9610s.pdf

IRF9610PBF
IRF9610PBF

IRF9610S, SiHF9610SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200Definition Surface MountRDS(on) ()VGS = - 10 V 3.0 Available in Tape and Reel Qg (Max.) (nC) 11 Dynamic dV/dt RatingQgs (nC) 7.0 P-Channel Fast SwitchingQgd (nC) 4.0 Ease of ParallelingConfiguration Single Si

 7.6. Size:190K  vishay
irf9610 sihf9610.pdf

IRF9610PBF
IRF9610PBF

IRF9610, SiHF9610Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200 P-ChannelAvailableRDS(on) ()VGS = - 10 V 3.0 Fast SwitchingRoHS*Qg (Max.) (nC) 11COMPLIANT Ease of ParallelingQgs (nC) 7.0 Simple Drive RequirementsQgd (nC) 4.0 Lead (Pb)-free AvailableConfiguration SingleDESCRIPTIONSThe Power MOS

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