IRF9620SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD- 95787IRF9620SPbF Lead-Free06/8/05Document Number: 91083 www.vishay.com1IRF9620SPbFDocument Number: 91083 www.vishay.com2IRF9620SPbFDocument Number: 91083 www.vishay.com3IRF9620SPbFDocument Number: 91083 www.vishay.com4IRF9620SPbFDocument Number: 91083 www.vishay.com5IRF9620SPbFDocument Number: 91083 www.vishay.com6IRF9620SPbFPeak Diode Re

IRF9620S, SiHF9620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface Mount RDS(on) ()VGS = - 10 V 1.5 Available in Tape and ReelQg (Max.) (nC) 22 Dynamic dV/dt Rating P-ChannelQgs (nC) 12 Fast SwitchingQgd (nC) 10 Ease of ParallelingConfiguration Single Simp

IRF9620S, SiHF9620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface Mount RDS(on) ()VGS = - 10 V 1.5 Available in Tape and ReelQg (Max.) (nC) 22 Dynamic dV/dt Rating P-ChannelQgs (nC) 12 Fast SwitchingQgd (nC) 10 Ease of ParallelingConfiguration Single Simp

PD- 95414IRF9620PbF Lead-Freewww.irf.com 106/16/04IRF9620PbF2 www.irf.comIRF9620PbFwww.irf.com 3IRF9620PbF4 www.irf.comIRF9620PbFwww.irf.com 5IRF9620PbF6 www.irf.comIRF9620PbFwww.irf.com 7IRF9620PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

IRF9620, SiHF9620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available P-ChannelRDS(on) ()VGS = - 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 22COMPLIANT Ease of ParallelingQgs (nC) 12Qgd (nC) 10 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECSDESCRIPTIONT

IRF9620, IRF9621,S E M I C O N D U C T O RIRF9622, IRF9623-3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm,July 1998 P-Channel Power MOSFETsFeatures Description -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 1.5 and 2.4MOSFETs designed, tested, and guaranteed to withst