IRF9630SPBF Todos los transistores

 

IRF9630SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF9630SPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO-263

 Búsqueda de reemplazo de MOSFET IRF9630SPBF

 

IRF9630SPBF Datasheet (PDF)

 ..1. Size:1045K  international rectifier
irf9630spbf.pdf

IRF9630SPBF
IRF9630SPBF

PD- 95771IRF9630SPbF Lead-Free06/06/05Document Number: 91085 www.vishay.com1IRF9630SPbFDocument Number: 91085 www.vishay.com2IRF9630SPbFDocument Number: 91085 www.vishay.com3IRF9630SPbFDocument Number: 91085 www.vishay.com4IRF9630SPbFDocument Number: 91085 www.vishay.com5IRF9630SPbFDocument Number: 91085 www.vishay.com6IRF9630SPbFPeak Diode R

 ..2. Size:172K  vishay
irf9630spbf sihf9630s.pdf

IRF9630SPBF
IRF9630SPBF

IRF9630S, SiHF9630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface MountRDS(on) ()VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt RatingQgs (nC) 5.4 Repetitive Avalanche Rated P-ChannelQgd (nC) 15 Fast SwitchingConfiguration Single

 6.1. Size:179K  international rectifier
irf9630s.pdf

IRF9630SPBF
IRF9630SPBF

 6.2. Size:171K  vishay
irf9630s sihf9630s.pdf

IRF9630SPBF
IRF9630SPBF

IRF9630S, SiHF9630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface MountRDS(on) ()VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt RatingQgs (nC) 5.4 Repetitive Avalanche Rated P-ChannelQgd (nC) 15 Fast SwitchingConfiguration Single

 7.1. Size:175K  international rectifier
irf9630.pdf

IRF9630SPBF
IRF9630SPBF

 7.2. Size:2142K  international rectifier
irf9630pbf.pdf

IRF9630SPBF
IRF9630SPBF

PD - 94958IRF9630PbF Lead-Free01/29/04Document Number: 91084 www.vishay.com1IRF9630PbFDocument Number: 91084 www.vishay.com2IRF9630PbFDocument Number: 91084 www.vishay.com3IRF9630PbFDocument Number: 91084 www.vishay.com4IRF9630PbFDocument Number: 91084 www.vishay.com5IRF9630PbFDocument Number: 91084 www.vishay.com6IRF9630PbFTO-220AB Package O

 7.3. Size:103K  fairchild semi
irf9630 rf1s9630sm.pdf

IRF9630SPBF
IRF9630SPBF

IRF9630, RF1S9630SMData Sheet January 20026.5A, 200V, 0.800 Ohm, P-Channel Power FeaturesMOSFETs 6.5A, 200VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown a

 7.5. Size:519K  samsung
irfp9230-33 irf9230-33 irf9630-33.pdf

IRF9630SPBF
IRF9630SPBF

 7.6. Size:197K  vishay
irf9630pbf sihf9630.pdf

IRF9630SPBF
IRF9630SPBF

IRF9630, SiHF9630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) (Max.) ()VGS = - 10 V 0.80RoHS* P-ChannelQg (Max.) (nC) 29COMPLIANT Fast SwitchingQgs (nC) 5.4 Ease of ParallelingQgd (nC) 15 Simple Drive RequirementsConfiguration Single Compliant to RoH

 7.7. Size:197K  vishay
irf9630 sihf9630.pdf

IRF9630SPBF
IRF9630SPBF

IRF9630, SiHF9630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) (Max.) ()VGS = - 10 V 0.80RoHS* P-ChannelQg (Max.) (nC) 29COMPLIANT Fast SwitchingQgs (nC) 5.4 Ease of ParallelingQgd (nC) 15 Simple Drive RequirementsConfiguration Single Compliant to RoH

 7.8. Size:406K  harris semi
irf9630 irf9631 irf9632 irf9633 rf1s9630.pdf

IRF9630SPBF
IRF9630SPBF

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