IRF9640PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF9640PBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 125 W
Voltaje máximo drenador - fuente |Vds|: 200 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 11 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 44 nC
Tiempo de subida (tr): 43 nS
Conductancia de drenaje-sustrato (Cd): 370 pF
Resistencia entre drenaje y fuente RDS(on): 0.5 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET IRF9640PBF
IRF9640PBF Datasheet (PDF)
irf9640pbf.pdf
PD - 94981IRF9640PbF Lead-Free02/04/04Document Number: 91086 www.vishay.com1IRF9640PbFDocument Number: 91086 www.vishay.com2IRF9640PbFDocument Number: 91086 www.vishay.com3IRF9640PbFDocument Number: 91086 www.vishay.com4IRF9640PbFDocument Number: 91086 www.vishay.com5IRF9640PbFDocument Number: 91086 www.vishay.com6IRF9640PbFTO-220AB Package O
irf9640pbf sihf9640.pdf
IRF9640, SiHF9640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 44 Fast SwitchingQgs (nC) 7.1 Ease of ParallelingQgd (nC) 27 Simple Drive RequirementsConfiguration Single Compliant to RoHS Direc
irf9640spbf.pdf
PD - 95117AIRF9640SPbF Lead-Free06/09/05Document Number: 91087 www.vishay.com1IRF9640SPbFDocument Number: 91087 www.vishay.com2IRF9640SPbFDocument Number: 91087 www.vishay.com3IRF9640SPbFDocument Number: 91087 www.vishay.com4IRF9640SPbFDocument Number: 91087 www.vishay.com5IRF9640SPbFDocument Number: 91087 www.vishay.com6IRF9640SPbFPeak Diode
irf9640 rf1s9640sm.pdf
IRF9640, RF1S9640SMData Sheet January 200211A, 200V, 0.500 Ohm, P-Channel Power FeaturesMOSFETs 11A, 200VThese are P-Channel enhancement mode silicon-gate rDS(ON) = 0.500power field-effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava
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irf9640s sihf9640s irf9640l sihf9640l.pdf
IRF9640S, SiHF9640S, IRF9640L, SiHF9640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200 Definition Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 44 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 7.1 P-ChannelQgd (nC) 27 Fast Switching
irf9640l irf9640lpbf.pdf
IRF9640S, SiHF9640S, IRF9640L, SiHF9640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200 Definition Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 44 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 7.1 P-ChannelQgd (nC) 27 Fast Switching
irf9640 sihf9640.pdf
IRF9640, SiHF9640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 44 Fast SwitchingQgs (nC) 7.1 Ease of ParallelingQgd (nC) 27 Simple Drive RequirementsConfiguration Single Compliant to RoHS Direc
irf9640spbf sihf9640l sihf9640s.pdf
IRF9640S, SiHF9640S, IRF9640L, SiHF9640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200 Definition Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 44 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 7.1 P-ChannelQgd (nC) 27 Fast Switching
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