IRF9Z24NLPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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PD - 91742AIRF9Z24NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z24NS)VDSS = -55V Low-profile through-hole (IRF9Z24NL) 175C Operating TemperatureRDS(on) = 0.175 P-ChannelG Fast SwitchingID = -12A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

PD - 94982IRF9Z24NPbF Lead-Freewww.irf.com 1 IRF9Z24NPbF2 www.irf.comIRF9Z24NPbFwww.irf.com 3IRF9Z24NPbF4 www.irf.comIRF9Z24NPbFwww.irf.com 5IRF9Z24NPbF6 www.irf.comIRF9Z24NPbFPeak Diode Recovery dv/dt Test Circuit *

PD -9.1484BIRF9Z24NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.175 P-ChannelG Fully Avalanche RatedID = -12ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

IRF9Z24NSwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Load