IRF9Z24PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9Z24PBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 68 nS

Cossⓘ - Capacitancia de salida: 360 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm

Encapsulados: TO-220AB

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IRF9Z24PBF datasheet

 ..1. Size:1214K  international rectifier
 irf9z24pbf.pdf pdf_icon

IRF9Z24PBF

PD- 95415 IRF9Z24PbF Lead-Free 06/14/04 Document Number 91090 www.vishay.com 1 IRF9Z24PbF Document Number 91090 www.vishay.com 2 IRF9Z24PbF Document Number 91090 www.vishay.com 3 IRF9Z24PbF Document Number 91090 www.vishay.com 4 IRF9Z24PbF Document Number 91090 www.vishay.com 5 IRF9Z24PbF Document Number 91090 www.vishay.com 6 IRF9Z24PbF Document Number 91

 ..2. Size:197K  vishay
 irf9z24pbf sihf9z24.pdf pdf_icon

IRF9Z24PBF

IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.28 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 19 175 C Operating Temperature Qgs (nC) 5.4 Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Single Simple Drive Require

 7.1. Size:168K  international rectifier
 irf9z24ns.pdf pdf_icon

IRF9Z24PBF

PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z24NS) VDSS = -55V Low-profile through-hole (IRF9Z24NL) 175 C Operating Temperature RDS(on) = 0.175 P-Channel G Fast Switching ID = -12A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi

 7.2. Size:311K  international rectifier
 irf9z24s.pdf pdf_icon

IRF9Z24PBF

PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z24S) VDSS = -60V Low-profile through-hole (IRF9Z24L) 175 C Operating Temperature RDS(on) = 0.28 Fast Switching G P- Channel ID = -11A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

MOSTRAR MÁS

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