IRF9Z34SPBF Todos los transistores

 

IRF9Z34SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF9Z34SPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 88 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 620 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO-263
     - Selección de transistores por parámetros

 

IRF9Z34SPBF Datasheet (PDF)

 ..1. Size:193K  vishay
 irf9z34spbf sihf9z34l sihf9z34s.pdf pdf_icon

IRF9Z34SPBF

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S)Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating TemperatureQgs (nC) 9.9

 6.1. Size:334K  international rectifier
 irf9z34s.pdf pdf_icon

IRF9Z34SPBF

PD - 9.913AIRF9Z34S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z34S)VDSS = -60V Low-profile through-hole (IRF9Z34L) 175C Operating TemperatureRDS(on) = 0.14 Fast SwitchingG P- ChannelID = -18A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 6.2. Size:168K  vishay
 irf9z34s sihf9z34s irf9z34l sihf9z34l.pdf pdf_icon

IRF9Z34SPBF

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S)Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating TemperatureQgs (nC) 9.9

 7.1. Size:108K  international rectifier
 irf9z34n.pdf pdf_icon

IRF9Z34SPBF

PD - 9.1485BIRF9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -19ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TPA70R260M | WPM4801 | S68N08ZRN | MSF9N70 | UT20N03 | FDMS3660AS | KRF7343

 

 
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