IRF9Z34SPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9Z34SPBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 88 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 620 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: TO-263

  📄📄 Copiar 

 Búsqueda de reemplazo de IRF9Z34SPBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRF9Z34SPBF datasheet

 ..1. Size:193K  vishay
 irf9z34spbf sihf9z34l sihf9z34s.pdf pdf_icon

IRF9Z34SPBF

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating Temperature Qgs (nC) 9.9

 6.1. Size:334K  international rectifier
 irf9z34s.pdf pdf_icon

IRF9Z34SPBF

PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34S) VDSS = -60V Low-profile through-hole (IRF9Z34L) 175 C Operating Temperature RDS(on) = 0.14 Fast Switching G P- Channel ID = -18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

 6.2. Size:168K  vishay
 irf9z34s sihf9z34s irf9z34l sihf9z34l.pdf pdf_icon

IRF9Z34SPBF

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating Temperature Qgs (nC) 9.9

 7.1. Size:108K  international rectifier
 irf9z34n.pdf pdf_icon

IRF9Z34SPBF

PD - 9.1485B IRF9Z34N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.10 P-Channel G Fully Avalanche Rated ID = -19A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are

MOSTRAR MÁS

Otros transistores... IRF9Z24PBF, IRF9Z24SPBF, IRF9Z30PBF, IRF9Z34L, IRF9Z34NLPBF, IRF9Z34NPBF, IRF9Z34NSPBF, IRF9Z34PBF, P60NF06, IRFAC30, IRFAC40, IRFAC42, IRFAE30, IRFAE40, IRFAE50, IRFAF30, IRFAF50