SSM5H07TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM5H07TU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm
   Paquete / Cubierta: 2-2R1A

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SSM5H07TU Datasheet (PDF)

..1. Size:309K toshiba
ssm5h07tu.pdf

SSM5H07TU Silicon N Channel MOS Type (-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H07TU DC-DC Converter Unit: mm Nch MOSFET and Schottky diode combined in one package Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.2Drain current A

8.1. Size:267K 1
ssm5h05tu.pdf

SSM5H05TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode in one package. Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.5Drain current A

8.2. Size:222K toshiba
ssm5h06fe.pdf

SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode in one Package 1.60.05 Small package 1.20.05Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating Unit 1 5Drain-Source voltage VDS 20 V 2VGSS 10 Gate-Source voltage V ID 100DC

8.3. Size:205K toshiba
ssm5h01tu.pdf

SSM5H01TU Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5H01TU DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 30 VGate-Source voltage VGSS 20 VDC ID 1.4Drain current

8.4. Size:304K toshiba
ssm5h05tu.pdf

8.5. Size:306K toshiba
ssm5h08tu.pdf

SSM5H08TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter Unit: mm Nch MOSFET and schottky diode combined in one package Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.5Drain current A

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