SSM5P15FE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM5P15FE  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 8.6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 12 Ohm

Encapsulados: 2-2P1B

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SSM5P15FE datasheet

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SSM5P15FE

SSM5P15FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM5P15FE High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 12 (max) (@VGS = -4 V) Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS -3

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SSM5P15FE

SSM5P15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM5P15FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 12 (max) (@VGS = -4 V) Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS -3

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SSM5P15FE

SSM5P16FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOSVI) SSM5P16FE High Speed Switching Applications Analog Switch Applications Small package Unit mm Low on-resistance R 8 (max) (@VGS 4 V) DS(ON) R 12 (max) (@VGS 2.5 V) DS(ON) R 45 (max) (@VGS 1.5 V) DS(ON) Absolute Maximum Ratings (Ta = 25 C)

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SSM5P15FE

SSM5P16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOSVI) SSM5P16FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on-resistance RDS(ON) = 8 (max) (@VGS = -4 V) RDS(ON) = 12 (max) (@VGS = -2.5 V) RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Char

MOSTRAR MÁS

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