SSM6680GM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM6680GM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 11.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.3 nS

Cossⓘ - Capacitancia de salida: 285 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: SO-8

  📄📄 Copiar 

 Búsqueda de reemplazo de SSM6680GM MOSFET

- Selecciónⓘ de transistores por parámetros

 

SSM6680GM datasheet

 ..1. Size:593K  silicon standard
 ssm6680gm.pdf pdf_icon

SSM6680GM

SSM6680GM N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM6680GM acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It RDS(ON) 11m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 11.5A D The SSM6680M is supplied in an RoHS-compliant Pb-free; RoHS-c

 9.1. Size:148K  silicon standard
 ssm6618m.pdf pdf_icon

SSM6680GM

SSM6618M N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV 25V DSS D D Fast switching speed D RDS(ON) 30m D Surface-mount package ID 7A G S S SO-8 S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and G cost-effectiveness. S Absolute Maximum R

 9.2. Size:194K  silicon standard
 ssm6679gm.pdf pdf_icon

SSM6680GM

SSM6679GM P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D D BVDSS -30V Simple Drive Requirement D D Low On-resistance RDS(ON) 9m G Fast Switching Characteristic ID -14A S S SO-8 S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D provide the designer with the best combination of fast switching, ruggedized device design, low on-resist

Otros transistores... SSM5P15FE, SSM60T03GH, SSM60T03GJ, SSM60T03GP, SSM60T03GS, SSM630GP, SSM6618M, SSM6679GM, IRF640, SSM6923O, SSM6G18NU, SSM6H19NU, SSM6J216FE, SSM6J414TU, SSM6J505NU, SSM6J507NU, SSM6J512NU