SSM9406GM Datasheet. Equivalente

 ..1. Size:493K  silicon standard
 ssm9406gm.pdf

SSM9406GM N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9406GM acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It RDS(ON) 18m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 9A D The SSM9406GM is supplied in an RoHS-compliant Pb-free; RoHS-com

 8.1. Size:168K  silicon standard
 ssm9408gh.pdf

SSM9408GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D BVDSS 30V Lower Gate Charge RDS(ON) 10m Simple Drive Requirement G ID 57A Fast Switching Characteristic S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

 9.1. Size:326K  silicon standard
 ssm9475m.pdf

SSM9475M N-channel Enhancement-mode Power MOSFET D Simple drive requirement BVDSS 60V Lower gate charge RDS(ON) 40m G Fast switching characteristics I 6.9A D S DESCRIPTION D D Advanced Power MOSFETs from Silicon Standard provide the D D designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S S SO-8 S

 9.2. Size:522K  silicon standard
 ssm9435gm.pdf

SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9435GM acheives fast switching performance BVDSS -30V with low gate charge without a complex drive circuit. It RDS(ON) 50m is suitable for low voltage applications such as battery management and general high-side switch circuits. I -5.3A D The SSM9435GM is supplied in an RoHS-compliant Pb-free;

 9.3. Size:200K  silicon standard
 ssm9435k.pdf

SSM9435K P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BV -30V DSS D Low on-resistance R 50m DS(ON) S Fast switching ID -6A D G SOT-223 Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G low on-resistance and cost-effectiveness. S Absolute Maximum Ratings Symbol Parameter Ratin

 9.4. Size:160K  silicon standard
 ssm9410gm.pdf

SSM9410M N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BVDSS 30V D D Low on-resistance RDS(ON) 6m D D Fast switching ID 18A G S S SO-8 S Description D Advanced power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is

 9.5. Size:293K  silicon standard
 ssm9435gh ssm9435gj.pdf

SSM9435GH,J P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -30V D Simple drive requirement R 50m DS(ON) Fast switching ID -20A G Pb-free; RoHS compliant. S DESCRIPTION G The SSM9435H is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC

 9.6. Size:217K  silicon standard
 ssm9477m.pdf

SSM9477M/GM N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BV 60V DSS D D Lower gate charge R 90m DS(ON) D D Fast switching characteristics ID 4A G S S SO-8 S Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G

 9.7. Size:842K  cn vbsemi
 ssm9435gm.pdf

SSM9435GM www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top