SSM9435GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM9435GJ
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 187 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: TO-251
- Selección de transistores por parámetros
SSM9435GJ Datasheet (PDF)
ssm9435gh ssm9435gj.pdf

SSM9435GH,JP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -30VDSimple drive requirement R 50mDS(ON)Fast switching ID -20AGPb-free; RoHS compliant.SDESCRIPTIONGThe SSM9435H is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC
ssm9435gm.pdf

SSM9435GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9435GM acheives fast switching performanceBVDSS -30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 50mis suitable for low voltage applications such as batterymanagement and general high-side switch circuits.I -5.3AD The SSM9435GM is supplied in an RoHS-compliantPb-free;
ssm9435gm.pdf

SSM9435GMwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop
ssm9435k.pdf

SSM9435KP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV -30VDSSDLow on-resistance R 50mDS(ON)SFast switching ID -6ADGSOT-223DescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G low on-resistance and cost-effectiveness.SAbsolute Maximum RatingsSymbol Parameter Ratin
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: IRFS250 | CSFR2N60F | VS3645DE-G | IRFS251 | SSP2N60A | IRFS331
History: IRFS250 | CSFR2N60F | VS3645DE-G | IRFS251 | SSP2N60A | IRFS331



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