SSM9435GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM9435GM
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.5 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 5.3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 9 nC
Tiempo de subida (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 222 pF
Resistencia entre drenaje y fuente RDS(on): 0.05 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MOSFET SSM9435GM
SSM9435GM Datasheet (PDF)
ssm9435gm.pdf
SSM9435GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9435GM acheives fast switching performanceBVDSS -30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 50mis suitable for low voltage applications such as batterymanagement and general high-side switch circuits.I -5.3AD The SSM9435GM is supplied in an RoHS-compliantPb-free;
ssm9435gm.pdf
SSM9435GMwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop
ssm9435gh ssm9435gj.pdf
SSM9435GH,JP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -30VDSimple drive requirement R 50mDS(ON)Fast switching ID -20AGPb-free; RoHS compliant.SDESCRIPTIONGThe SSM9435H is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC
ssm9435k.pdf
SSM9435KP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV -30VDSSDLow on-resistance R 50mDS(ON)SFast switching ID -6ADGSOT-223DescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G low on-resistance and cost-effectiveness.SAbsolute Maximum RatingsSymbol Parameter Ratin
ssm9475m.pdf
SSM9475MN-channel Enhancement-mode Power MOSFETDSimple drive requirement BVDSS 60VLower gate charge RDS(ON) 40mGFast switching characteristics I 6.9ADSDESCRIPTIONDDAdvanced Power MOSFETs from Silicon Standard provide theDDdesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.GSSSO-8S
ssm9408gh.pdf
SSM9408GHN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY D BVDSS 30VLower Gate ChargeRDS(ON) 10mSimple Drive Requirement G ID 57AFast Switching CharacteristicSDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
ssm9406gm.pdf
SSM9406GMN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9406GM acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 18mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 9AD The SSM9406GM is supplied in an RoHS-compliantPb-free; RoHS-com
ssm9410gm.pdf
SSM9410MN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS 30VDDLow on-resistance RDS(ON) 6mDDFast switching ID 18AGSSSO-8SDescriptionDAdvanced power MOSFETs from Silicon Standard providethe designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.GSThe SO-8 package is
ssm9477m.pdf
SSM9477M/GMN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV 60VDSSDDLower gate charge R 90mDS(ON)DDFast switching characteristics ID 4AGSSSO-8SDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.G
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