SSM95T07GP Datasheet. Equivalente

 ..1. Size:244K  silicon standard
 ssm95t07gp.pdf

SSM95T07GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D BVDSS 75V Simple Drive Requirement RDS(ON) 5m Lower On-resistance ID 80A G Fast Switching Characteristic RoHS Compliant S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

 7.1. Size:287K  silicon standard
 ssm95t06gp ssm95t06gs.pdf

SSM95T06GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60V DSS D Simple drive requirement R 8.5m DS(ON) Fast switching ID 75A G S Description G The SSM95T06S is in a TO-263 package, which is widely used for D S commercial and industrial surface mount applications, and is well suited TO-263 (S) for low voltage applications such as DC/DC converters. The throug

 9.1. Size:729K  secos
 ssm9575.pdf

 9.2. Size:303K  silicon standard
 ssm9585gm ssm9585gp.pdf

SSM9585GM P-channel Enhancement-mode Power MOSFET D Simple drive requirement BVDSS -80V Lower gate charge RDS(ON) 180m Fast switching characteristics I -2.7A D G Pb-free; RoHS compliant. S DESCRIPTION D D Advanced Power MOSFETs from Silicon Standard provide the D D designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe

 9.3. Size:531K  silicon standard
 ssm9567gm.pdf

SSM9567GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9567GM acheives fast switching performance BVDSS -40V with low gate charge without a complex drive circuit. It RDS(ON) 50m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I -6A D The SSM9567GM is supplied in an RoHS-compliant Pb-free; RoHS-c

 9.4. Size:430K  silicon standard
 ssm9510gm.pdf

SSM9510GM N- and P-channel Enhancement-mode Power MOSFETs N-CH BVDSS 30V Simple drive requirement D2 D2 D2 RDS(ON) 28m Lower gate charge D1 D1 D1 D1 ID 6.9A Fast switching characteristics G2 G2 P-CH BVDSS -30V Pb-free; RoHS compliant. S2 S2 G1 SO-8 S1G1 RDS(ON) 55m S1 DESCRIPTION ID -5.3A Advanced Power MOSFETs from Silicon Standard provide the D2 D1 designer

 9.5. Size:526K  silicon standard
 ssm9563m.pdf

SSM9563GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9563GM acheives fast switching performance BVDSS -40V with low gate charge without a complex drive circuit. It RDS(ON) 40m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I -6A D The SSM9563GM is supplied in an RoHS-compliant Pb-free; RoHS-c

 9.6. Size:526K  silicon standard
 ssm9564gm.pdf

SSM9564GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9564GM acheives fast switching performance BVDSS -40V with low gate charge without a complex drive circuit. It RDS(ON) 28m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I -7.3A D The SSM9564GM is supplied in an RoHS-compliant Pb-free; RoHS

 9.7. Size:223K  silicon standard
 ssm9575m.pdf

SSM9575M/GM P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BV -60V DSS D D Low on-resistance R 90m DS(ON) D D Fast switching characteristics ID -4A G S S SO-8 S Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness.