SSM9915K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM9915K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 6.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de SSM9915K MOSFET
SSM9915K Datasheet (PDF)
ssm9915k.pdf

SSM9915KN-CHANNEL ENHANCEMENT MODE POWER MOSFETSimple drive requirement BVDSS 20VDLower gate charge RDS(ON) 50mFast switching characteristic ID 6.2ASDSOT-223GDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G low on-resistance and cost-effectiveness.SAbsolute Maximum RatingsSymbol Para
ssm9915gh ssm9915gj.pdf

SSM9915H,JN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETLow on-resistance BV 20VD DSSCapable of 2.5V gate drive R 50mDS(ON)Low drive current I 20ADGSimple drive requirementSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effective
ssm9918gh ssm9918gj.pdf

SSM9918H,JN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETLow on-resistance BV 20VDSSDCapable of 2.5V gate drive R 14mDS(ON)Low drive current I 45ADGSurface mount packageSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectivene
ssm9916gh ssm9916gj.pdf

SSM9916H,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BV 18VD DSSCapable of 2.5V gate drive RDS(ON) 25mLow drive current ID 35AGSimple drive requirementSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectiveness
Otros transistores... SSM9585GP , SSM95T06GP , SSM95T06GS , SSM95T07GP , SSM9620M , SSM9685M , SSM9915GH , SSM9915GJ , 75N75 , SSM9916GH , SSM9916GJ , SSM9918GH , SSM9918GJ , SSM9922GEO , SSM9926EM , SSM9926GEO , SSM9926GM .
History: SJMN230R70ZF | MTDK3S6R | TMA12N65H | STI15NM60N | SSPL2090 | MTB55N06Q8 | RU60E16R
History: SJMN230R70ZF | MTDK3S6R | TMA12N65H | STI15NM60N | SSPL2090 | MTB55N06Q8 | RU60E16R



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