SSM9922GEO Datasheet. Equivalente

 ..1. Size:247K  silicon standard
 ssm9922geo.pdf

SSM9922(G)EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance BV 20V DSS Capable of 2.5V gate drive RDS(ON) 15m G2 S2 S2 Ideal for DC/DC battery applications D2 ID 6.8A G1 S1 S1 TSSOP-8 D1 Description D1 D2 Power MOSFETs from Silicon Standard provide the G1 G2 designer with the best combination of fast switching, ruggedized device design, ultra low on-resist

 8.1. Size:560K  silicon standard
 ssm9926gm.pdf

SSM9926GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM9926GM acheives fast switching performance BVDSS 20V with low gate charge without a complex drive circuit. It RDS(ON) 30m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 6A D The SSM9926GM is supplied in an RoHS-compliant Pb-free; Ro

 8.2. Size:264K  silicon standard
 ssm9926o.pdf

SSM9926O N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Low drive current S1 S2 Surface mount package DESCRIPTION BVDSS 20V RDS(ON) 28m The Advanced Power MOSFETs from Silicon Standard Corp. ID 4.6A provide the designer with the best combination of fast switching, ruggedized device design, ultra l

 8.3. Size:242K  silicon standard
 ssm9926tgo.pdf

SSM9926TGO N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Surface mount package S1 S2 DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast switching, RDS(ON) 32m ruggedized device design, ultra low on-resistance and ID 4.

 8.4. Size:261K  silicon standard
 ssm9928geo.pdf

SSM9928(G)EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance BV 20V DSS Capable of 2.5V gate drive RDS(ON) 23m G2 S2 S2 Ideal for DC/DC battery applications D2 ID 5A G1 S1 S1 TSSOP-8 D1 Description D1 D2 Power MOSFETs from Silicon Standard provide the G1 G2 designer with the best combination of fast switching, ruggedized device design, ultra low on-resistan

 8.5. Size:249K  silicon standard
 ssm9928o.pdf

SSM9928O N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D1 D2 Low on-resistance G1 G2 Capable of 2.5V gate drive Optimal DC/DC battery application S1 S2 DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast RDS(ON) 23m switching, ruggedized device design, ultra low on-resistance I

 8.6. Size:144K  silicon standard
 ssm9926em.pdf

SSM9926EM N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance BV 20V DSS D2 D2 Capable of 2.5V gate drive D1 RDS(ON) 30m D1 Low drive current I 6A D G2 S2 Surface-mount package G1 SO-8 S1 Description Power MOSFETs from Silicon Standard provide the D1 D2 designer with the best combination of fast switching, G1 G2 ruggedized device design, ultra low on-resistance a

 8.7. Size:146K  silicon standard
 ssm9926geo.pdf

SSM9926GEO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS G2 Low on-resistance BV 20V DSS S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 28m G1 S1 Low drive current S1 I 4.6A D TSSOP-8 D1 Surface-mount package Description D1 D2 Power MOSFETs from Silicon Standard provide the G1 G2 designer with the best combination of fast switching, ruggedized device design, ultra low on-resista