SSM9922GEO MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM9922GEO
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 25 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TSSOP-8

Búsqueda de reemplazo de MOSFET SSM9922GEO

SSM9922GEO Datasheet (PDF)

..1. Size:247K silicon standard
ssm9922geo.pdf

SSM9922(G)EODUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSLow on-resistance BV 20VDSSCapable of 2.5V gate drive RDS(ON) 15mG2S2S2Ideal for DC/DC battery applications D2 ID 6.8AG1S1S1TSSOP-8D1DescriptionD1 D2Power MOSFETs from Silicon Standard provide theG1 G2designer with the best combination of fast switching,ruggedized device design, ultra low on-resist

8.1. Size:560K silicon standard
ssm9926gm.pdf

SSM9926GMDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM9926GM acheives fast switching performanceBVDSS 20Vwith low gate charge without a complex drive circuit. ItRDS(ON) 30mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 6AD The SSM9926GM is supplied in an RoHS-compliantPb-free; Ro

8.2. Size:264K silicon standard
ssm9926o.pdf

SSM9926ON-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2D1Low on-resistance Capable of 2.5V gate drive G2G1Low drive current S1 S2Surface mount package DESCRIPTION BVDSS 20V RDS(ON) 28m The Advanced Power MOSFETs from Silicon Standard Corp. ID 4.6A provide the designer with the best combination of fast switching,ruggedized device design, ultra l

8.3. Size:242K silicon standard
ssm9926tgo.pdf

SSM9926TGON-CHANNEL ENHANCEMENT MODE POWER MOSFETPRODUCT SUMMARY D2D1Low on-resistance Capable of 2.5V gate drive G2G1Surface mount package S1 S2DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast switching, RDS(ON) 32m ruggedized device design, ultra low on-resistance and ID 4.

8.4. Size:261K silicon standard
ssm9928geo.pdf

SSM9928(G)EODUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSLow on-resistance BV 20VDSSCapable of 2.5V gate drive RDS(ON) 23mG2S2S2Ideal for DC/DC battery applications D2 ID 5AG1S1S1TSSOP-8D1DescriptionD1 D2Power MOSFETs from Silicon Standard provide theG1 G2designer with the best combination of fast switching,ruggedized device design, ultra low on-resistan

8.5. Size:249K silicon standard
ssm9928o.pdf

SSM9928ON-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY D1 D2Low on-resistance G1 G2Capable of 2.5V gate drive Optimal DC/DC battery application S1 S2DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast RDS(ON) 23m switching, ruggedized device design, ultra low on-resistance I

8.6. Size:144K silicon standard
ssm9926em.pdf

SSM9926EMN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSLow on-resistance BV 20VDSSD2D2Capable of 2.5V gate drive D1 RDS(ON) 30mD1Low drive current I 6ADG2S2Surface-mount packageG1SO-8S1DescriptionPower MOSFETs from Silicon Standard provide the D1 D2designer with the best combination of fast switching,G1 G2ruggedized device design, ultra low on-resistance a

8.7. Size:146K silicon standard
ssm9926geo.pdf

SSM9926GEON-CHANNEL ENHANCEMENT-MODE POWER MOSFETSG2Low on-resistance BV 20VDSSS2S2D2Capable of 2.5V gate drive RDS(ON) 28mG1S1Low drive current S1 I 4.6ADTSSOP-8D1Surface-mount packageDescriptionD1 D2Power MOSFETs from Silicon Standard provide theG1 G2designer with the best combination of fast switching,ruggedized device design, ultra low on-resista

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