SSM9928GEO MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSM9928(G)EODUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSLow on-resistance BV 20VDSSCapable of 2.5V gate drive RDS(ON) 23mG2S2S2Ideal for DC/DC battery applications D2 ID 5AG1S1S1TSSOP-8D1DescriptionD1 D2Power MOSFETs from Silicon Standard provide theG1 G2designer with the best combination of fast switching,ruggedized device design, ultra low on-resistan

SSM9928ON-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY D1 D2Low on-resistance G1 G2Capable of 2.5V gate drive Optimal DC/DC battery application S1 S2DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast RDS(ON) 23m switching, ruggedized device design, ultra low on-resistance I

SSM9926GMDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM9926GM acheives fast switching performanceBVDSS 20Vwith low gate charge without a complex drive circuit. ItRDS(ON) 30mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 6AD The SSM9926GM is supplied in an RoHS-compliantPb-free; Ro

SSM9926ON-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2D1Low on-resistance Capable of 2.5V gate drive G2G1Low drive current S1 S2Surface mount package DESCRIPTION BVDSS 20V RDS(ON) 28m The Advanced Power MOSFETs from Silicon Standard Corp. ID 4.6A provide the designer with the best combination of fast switching,ruggedized device design, ultra l

SSM9922(G)EODUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSLow on-resistance BV 20VDSSCapable of 2.5V gate drive RDS(ON) 15mG2S2S2Ideal for DC/DC battery applications D2 ID 6.8AG1S1S1TSSOP-8D1DescriptionD1 D2Power MOSFETs from Silicon Standard provide theG1 G2designer with the best combination of fast switching,ruggedized device design, ultra low on-resist

SSM9926TGON-CHANNEL ENHANCEMENT MODE POWER MOSFETPRODUCT SUMMARY D2D1Low on-resistance Capable of 2.5V gate drive G2G1Surface mount package S1 S2DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast switching, RDS(ON) 32m ruggedized device design, ultra low on-resistance and ID 4.

SSM9926EMN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSLow on-resistance BV 20VDSSD2D2Capable of 2.5V gate drive D1 RDS(ON) 30mD1Low drive current I 6ADG2S2Surface-mount packageG1SO-8S1DescriptionPower MOSFETs from Silicon Standard provide the D1 D2designer with the best combination of fast switching,G1 G2ruggedized device design, ultra low on-resistance a

SSM9926GEON-CHANNEL ENHANCEMENT-MODE POWER MOSFETSG2Low on-resistance BV 20VDSSS2S2D2Capable of 2.5V gate drive RDS(ON) 28mG1S1Low drive current S1 I 4.6ADTSSOP-8D1Surface-mount packageDescriptionD1 D2Power MOSFETs from Silicon Standard provide theG1 G2designer with the best combination of fast switching,ruggedized device design, ultra low on-resista