SSM9930M Datasheet. Equivalente

 ..1. Size:338K  silicon standard
 ssm9930m.pdf

SSM9930M DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS P2G Simple drive requirement N-CH BV 30V DSS N2D/P2D Low on-resistance R 33m P1S/P2S DS(ON) P1G Full-bridge applications, such as I 6.3A N2G D N1S/N2S LCD monitor inverter P-CH BV -30V DSS N1D/P1D N1G SO-8 RDS(ON) 55m Description ID -5.1A Advanced Power MOSFETs from Silicon Standard provide the P1S P

 8.1. Size:246K  silicon standard
 ssm9934gm.pdf

SSM9934GM 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY P2G N-CH BVDSS 35V N2D/P2D Simple Drive Requirement RDS(ON) 48m P1S/P2S Low On-resistance P1G ID 4.3A N2G Full Bridge Application on N1S/N2S P-CH BVDSS -35V LCD Monitor Inverter N1D/P1D N1G SO-8 RDS(ON) 72m DESCRIPTION ID -3.6A P1S P2S The advanced power MOSFETs from Silicon Standard Corp. p

 9.1. Size:587K  secos
 ssm9971.pdf

SSM9971 5A, 60V,RDS(ON) 50m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SOT-223 The SSM9971 provide the designer with the best combination of fast switching,low on-resistance, cost-effectiveness and ruggedized device design. Features * Simple Drive Requirement * Low On-Resistance Millimeter Millimeter REF. REF. Mi

 9.2. Size:238K  silicon standard
 ssm9977gm.pdf

SSM9977M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV 60V DSS D2 D2 Lower gate charge R 90m DS(ON) D1 D1 Fast switching characteristics ID 3.5A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the G2 G1 designer with the best combination of fast switching, ruggedized device design, low on-resistance

 9.3. Size:257K  silicon standard
 ssm9960m.pdf

SSM9960M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV 40V D2 DSS D2 D1 Lower gate charge R 20m DS(ON) D1 Fast switching characteristics ID 7.8A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 ruggedized device design, low on-resistance and

 9.4. Size:249K  silicon standard
 ssm9975m.pdf

SSM9975M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV 60V D2 DSS D2 D1 Lower gate charge R 21m DS(ON) D1 Fast switching characteristics ID 7.6A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 ruggedized device design, low on-resistance and

 9.5. Size:560K  silicon standard
 ssm9926gm.pdf

SSM9926GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM9926GM acheives fast switching performance BVDSS 20V with low gate charge without a complex drive circuit. It RDS(ON) 30m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 6A D The SSM9926GM is supplied in an RoHS-compliant Pb-free; Ro

 9.6. Size:280K  silicon standard
 ssm9973gh ssm9973gj.pdf

SSM9973GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60V DSS D Simple drive requirement R 80m DS(ON) Fast switching ID 14A G S Description G The SSM9973GH is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-h

 9.7. Size:202K  silicon standard
 ssm9985gm.pdf

SSM9985GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low On-Resistance BVDSS 40V D Fast Switching Speed D D RDS(ON) 15m Surface Mount Package D ID 10A G S S SO-8 S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

 9.8. Size:300K  silicon standard
 ssm9915gh ssm9915gj.pdf

SSM9915H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV 20V D DSS Capable of 2.5V gate drive R 50m DS(ON) Low drive current I 20A D G Simple drive requirement S Description G Power MOSFETs from Silicon Standard provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effective

 9.9. Size:264K  silicon standard
 ssm9926o.pdf

SSM9926O N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Low drive current S1 S2 Surface mount package DESCRIPTION BVDSS 20V RDS(ON) 28m The Advanced Power MOSFETs from Silicon Standard Corp. ID 4.6A provide the designer with the best combination of fast switching, ruggedized device design, ultra l

 9.10. Size:717K  silicon standard
 ssm9974gp ssm9974gs.pdf

SSM9974GP,S N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9974 acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It is RDS(ON) 12m suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 72A D The SSM9974GS is in a TO-263 package, which is Pb-free; RoHS-co

 9.11. Size:247K  silicon standard
 ssm9922geo.pdf

SSM9922(G)EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance BV 20V DSS Capable of 2.5V gate drive RDS(ON) 15m G2 S2 S2 Ideal for DC/DC battery applications D2 ID 6.8A G1 S1 S1 TSSOP-8 D1 Description D1 D2 Power MOSFETs from Silicon Standard provide the G1 G2 designer with the best combination of fast switching, ruggedized device design, ultra low on-resist

 9.12. Size:192K  silicon standard
 ssm9987gh.pdf

SSM9987GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY BVDSS 80V D RDS(ON) 90m Low Gate Charge Single Drive Requirement ID 15A G Fast Switching Performance S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. G D S provide the designer with the best combination of fast switching, TO-252(H) ruggedized device design, low on-resistance and c

 9.13. Size:293K  silicon standard
 ssm9972gp ssm9972gs.pdf

SSM9972GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60V DSS D Simple drive requirement R 18m DS(ON) Fast switching ID 60A G S Description G The SSM9972GS is in a TO-263 package, which is widely used for D S commercial and industrial surface mount applications, and is well suited TO-263 (S) for low voltage applications such as DC/DC converters. The through-

 9.14. Size:206K  silicon standard
 ssm9915k.pdf

SSM9915K N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple drive requirement BVDSS 20V D Lower gate charge RDS(ON) 50m Fast switching characteristic ID 6.2A S D SOT-223 G Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G low on-resistance and cost-effectiveness. S Absolute Maximum Ratings Symbol Para

 9.15. Size:274K  silicon standard
 ssm9973gm.pdf

SSM9973GM Dual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 60V D2 D2 D1 Lower gate charge R RDS(ON) 80m D1 Fast switching characteristics I 3.9A I ID G2 S2 Pb-free; RoHS compliant. G1 SO-8 S1 DESCRIPTION D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device

 9.16. Size:226K  silicon standard
 ssm9980m.pdf

SSM9980M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV 80V D2 DSS D2 D1 Lower gate charge R 52m DS(ON) D1 Fast switching characteristics ID 4.6A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 ruggedized device design, low on-resistance and

 9.17. Size:764K  silicon standard
 ssm9980gh ssm9980gj.pdf

SSM9980GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9980Gx acheives fast switching performance BVDSS 80V with low gate charge without a complex drive circuit. It is RDS(ON) 45m suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 21A D The SSM9980GH is in a TO-252 package, which is Pb-free; RoHS-

 9.18. Size:277K  silicon standard
 ssm9977gh ssm9977gj.pdf

SSM9977GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60V DSS D Simple drive requirement R 90m DS(ON) Fast switching ID 11A G S Description G The SSM9977GH is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-h

 9.19. Size:242K  silicon standard
 ssm9926tgo.pdf

SSM9926TGO N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Surface mount package S1 S2 DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast switching, RDS(ON) 32m ruggedized device design, ultra low on-resistance and ID 4.

 9.20. Size:261K  silicon standard
 ssm9928geo.pdf

SSM9928(G)EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance BV 20V DSS Capable of 2.5V gate drive RDS(ON) 23m G2 S2 S2 Ideal for DC/DC battery applications D2 ID 5A G1 S1 S1 TSSOP-8 D1 Description D1 D2 Power MOSFETs from Silicon Standard provide the G1 G2 designer with the best combination of fast switching, ruggedized device design, ultra low on-resistan

 9.21. Size:249K  silicon standard
 ssm9928o.pdf

SSM9928O N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D1 D2 Low on-resistance G1 G2 Capable of 2.5V gate drive Optimal DC/DC battery application S1 S2 DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast RDS(ON) 23m switching, ruggedized device design, ultra low on-resistance I

 9.22. Size:144K  silicon standard
 ssm9926em.pdf

SSM9926EM N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance BV 20V DSS D2 D2 Capable of 2.5V gate drive D1 RDS(ON) 30m D1 Low drive current I 6A D G2 S2 Surface-mount package G1 SO-8 S1 Description Power MOSFETs from Silicon Standard provide the D1 D2 designer with the best combination of fast switching, G1 G2 ruggedized device design, ultra low on-resistance a

 9.23. Size:192K  silicon standard
 ssm9987gm.pdf

SSM9987GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D2 Low Gate Charge BVDSS 80V D1 D1 Single Drive Requirement RDS(ON) 90m G2 Surface Mount Package S2 ID 3.5A G1 SO-8 S1 DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D2 D1 provide the designer with the best combination of fast switching, ruggedized device design, lower on-resi

 9.24. Size:280K  silicon standard
 ssm9971gh ssm9971gj.pdf

SSM9971GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60V DSS D Simple drive requirement R 36m DS(ON) Fast switching ID 25A G S Description G The SSM9971GH is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-h

 9.25. Size:301K  silicon standard
 ssm9918gh ssm9918gj.pdf

SSM9918H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV 20V DSS D Capable of 2.5V gate drive R 14m DS(ON) Low drive current I 45A D G Surface mount package S Description G Power MOSFETs from Silicon Standard provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectivene

 9.26. Size:280K  silicon standard
 ssm9960gh ssm9960gj.pdf

SSM9960(G)H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 40V DSS D Simple drive requirement R 16m DS(ON) Fast switching ID 42A G S Description G The SSM9960H is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-

 9.27. Size:559K  silicon standard
 ssm9972gi.pdf

SSM9972GI N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9972GI achieves fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It RDS(ON) 18m is suitable for low voltage applications such as DC/DC converters and general switching circuits. I 35A D Pb-free; RoHS-compliant TO-220CFM The SSM9972GI is in TO-220CFM for

 9.28. Size:524K  silicon standard
 ssm9971gm.pdf

SSM9971GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM9971GM acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It RDS(ON) 50m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 5A D The SSM2310GM is supplied in an RoHS-compliant Pb-free; Ro

 9.29. Size:239K  silicon standard
 ssm9962m.pdf

SSM9962M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV 40V D2 DSS D2 D1 Lower gate charge R 25m DS(ON) D1 Fast switching characteristics ID 7A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 ruggedized device design, low on-resistance and co

 9.30. Size:146K  silicon standard
 ssm9926geo.pdf

SSM9926GEO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS G2 Low on-resistance BV 20V DSS S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 28m G1 S1 Low drive current S1 I 4.6A D TSSOP-8 D1 Surface-mount package Description D1 D2 Power MOSFETs from Silicon Standard provide the G1 G2 designer with the best combination of fast switching, ruggedized device design, ultra low on-resista

 9.31. Size:297K  silicon standard
 ssm9916gh ssm9916gj.pdf

SSM9916H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV 18V D DSS Capable of 2.5V gate drive RDS(ON) 25m Low drive current ID 35A G Simple drive requirement S Description G Power MOSFETs from Silicon Standard provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness

 9.32. Size:568K  silicon standard
 ssm9971gd.pdf

SSM9971GD Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM9971GD acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It RDS(ON) 50m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 5A D The SSM2310GD is supplied in an RoHS-compliant Pb-free; Ro