SSM9971GD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM9971GD 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 156 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Encapsulados: PDIP-8
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SSM9971GD datasheet
ssm9971gd.pdf
SSM9971GD Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM9971GD acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It RDS(ON) 50m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 5A D The SSM2310GD is supplied in an RoHS-compliant Pb-free; Ro
ssm9971gh ssm9971gj.pdf
SSM9971GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60V DSS D Simple drive requirement R 36m DS(ON) Fast switching ID 25A G S Description G The SSM9971GH is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-h
ssm9971gm.pdf
SSM9971GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM9971GM acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It RDS(ON) 50m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 5A D The SSM2310GM is supplied in an RoHS-compliant Pb-free; Ro
ssm9971.pdf
SSM9971 5A, 60V,RDS(ON) 50m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SOT-223 The SSM9971 provide the designer with the best combination of fast switching,low on-resistance, cost-effectiveness and ruggedized device design. Features * Simple Drive Requirement * Low On-Resistance Millimeter Millimeter REF. REF. Mi
Otros transistores... SSM9928GEO, SSM9928O, SSM9930M, SSM9934GM, SSM9960GH, SSM9960GJ, SSM9960M, SSM9962M, IRF9640, SSM9971GH, SSM9971GJ, SSM9971GM, SSM9972GI, SSM9972GP, SSM9972GS, SSM9973GH, SSM9973GJ
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