SSM9971GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM9971GJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 39 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
Paquete / Cubierta: TO-251
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SSM9971GJ Datasheet (PDF)
ssm9971gh ssm9971gj.pdf

SSM9971GH,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate-charge BV 60VDSSDSimple drive requirement R 36mDS(ON)Fast switching ID 25AGSDescriptionGThe SSM9971GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The through-h
ssm9971gm.pdf

SSM9971GMDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM9971GM acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 50mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 5AD The SSM2310GM is supplied in an RoHS-compliantPb-free; Ro
ssm9971gd.pdf

SSM9971GDDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM9971GD acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 50mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 5AD The SSM2310GD is supplied in an RoHS-compliantPb-free; Ro
ssm9971.pdf

SSM99715A, 60V,RDS(ON) 50m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionSOT-223The SSM9971 provide the designer with the best combination of fast switching,low on-resistance,cost-effectiveness and ruggedized device design.Features* Simple Drive Requirement* Low On-ResistanceMillimeter Millimeter REF. REF. Mi
Otros transistores... SSM9930M , SSM9934GM , SSM9960GH , SSM9960GJ , SSM9960M , SSM9962M , SSM9971GD , SSM9971GH , EMB04N03H , SSM9971GM , SSM9972GI , SSM9972GP , SSM9972GS , SSM9973GH , SSM9973GJ , SSM9973GM , SSM9974GP .
History: TMP6N70 | RU3080L | STI150N10F7 | KIA3510A-252 | IRFB3006G | IRFR4510PBF | IRF7379
History: TMP6N70 | RU3080L | STI150N10F7 | KIA3510A-252 | IRFB3006G | IRFR4510PBF | IRF7379



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