SSM9972GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM9972GP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 89 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 60 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 32 nC
Tiempo de subida (tr): 58 nS
Conductancia de drenaje-sustrato (Cd): 280 pF
Resistencia entre drenaje y fuente RDS(on): 0.018 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET SSM9972GP
SSM9972GP Datasheet (PDF)
ssm9972gp ssm9972gs.pdf
SSM9972GP,SN-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60VDSSDSimple drive requirement R 18mDS(ON)Fast switching ID 60AGSDescriptionGThe SSM9972GS is in a TO-263 package, which is widely used forDScommercial and industrial surface mount applications, and is well suited TO-263 (S)for low voltage applications such as DC/DC converters. The through-
ssm9972gi.pdf
SSM9972GIN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9972GI achieves fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 18mis suitable for low voltage applications such as DC/DCconverters and general switching circuits.I 35AD Pb-free; RoHS-compliant TO-220CFMThe SSM9972GI is in TO-220CFM for
ssm9971.pdf
SSM99715A, 60V,RDS(ON) 50m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionSOT-223The SSM9971 provide the designer with the best combination of fast switching,low on-resistance,cost-effectiveness and ruggedized device design.Features* Simple Drive Requirement* Low On-ResistanceMillimeter Millimeter REF. REF. Mi
ssm9977gm.pdf
SSM9977M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 60VDSSD2D2Lower gate charge R 90mDS(ON)D1D1Fast switching characteristics ID 3.5AG2S2G1SO-8S1Description D2D1Advanced Power MOSFETs from Silicon Standard provide theG2G1designer with the best combination of fast switching,ruggedized device design, low on-resistance
ssm9975m.pdf
SSM9975M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 60VD2 DSSD2D1Lower gate charge R 21mDS(ON)D1Fast switching characteristics ID 7.6AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and
ssm9973gh ssm9973gj.pdf
SSM9973GH,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate-charge BV 60VDSSDSimple drive requirement R 80mDS(ON)Fast switching ID 14AGSDescriptionGThe SSM9973GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The through-h
ssm9974gp ssm9974gs.pdf
SSM9974GP,SN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9974 acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. It isRDS(ON) 12msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 72AD The SSM9974GS is in a TO-263 package, which isPb-free; RoHS-co
ssm9973gm.pdf
SSM9973GMDual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 60VD2D2D1Lower gate charge R RDS(ON) 80mD1Fast switching characteristicsI 3.9AIIDG2S2Pb-free; RoHS compliant.G1SO-8S1DESCRIPTIOND2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, ruggedizeddevice
ssm9977gh ssm9977gj.pdf
SSM9977GH,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate-charge BV 60VDSSDSimple drive requirement R 90mDS(ON)Fast switching ID 11AGSDescriptionGThe SSM9977GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The through-h
ssm9971gh ssm9971gj.pdf
SSM9971GH,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate-charge BV 60VDSSDSimple drive requirement R 36mDS(ON)Fast switching ID 25AGSDescriptionGThe SSM9971GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The through-h
ssm9971gm.pdf
SSM9971GMDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM9971GM acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 50mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 5AD The SSM2310GM is supplied in an RoHS-compliantPb-free; Ro
ssm9971gd.pdf
SSM9971GDDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM9971GD acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 50mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 5AD The SSM2310GD is supplied in an RoHS-compliantPb-free; Ro
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