SSM9977GJ Todos los transistores

 

SSM9977GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM9977GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 21 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 6 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: TO-251
 

 Búsqueda de reemplazo de SSM9977GJ MOSFET

   - Selección ⓘ de transistores por parámetros

 

SSM9977GJ Datasheet (PDF)

 ..1. Size:277K  silicon standard
ssm9977gh ssm9977gj.pdf pdf_icon

SSM9977GJ

SSM9977GH,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate-charge BV 60VDSSDSimple drive requirement R 90mDS(ON)Fast switching ID 11AGSDescriptionGThe SSM9977GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The through-h

 6.1. Size:238K  silicon standard
ssm9977gm.pdf pdf_icon

SSM9977GJ

SSM9977M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 60VDSSD2D2Lower gate charge R 90mDS(ON)D1D1Fast switching characteristics ID 3.5AG2S2G1SO-8S1Description D2D1Advanced Power MOSFETs from Silicon Standard provide theG2G1designer with the best combination of fast switching,ruggedized device design, low on-resistance

 8.1. Size:587K  secos
ssm9971.pdf pdf_icon

SSM9977GJ

SSM99715A, 60V,RDS(ON) 50m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionSOT-223The SSM9971 provide the designer with the best combination of fast switching,low on-resistance,cost-effectiveness and ruggedized device design.Features* Simple Drive Requirement* Low On-ResistanceMillimeter Millimeter REF. REF. Mi

 8.2. Size:249K  silicon standard
ssm9975m.pdf pdf_icon

SSM9977GJ

SSM9975M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 60VD2 DSSD2D1Lower gate charge R 21mDS(ON)D1Fast switching characteristics ID 7.6AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and

Otros transistores... SSM9972GS , SSM9973GH , SSM9973GJ , SSM9973GM , SSM9974GP , SSM9974GS , SSM9975M , SSM9977GH , IRF3205 , SSM9977GM , SSM9980GH , SSM9980GJ , SSM9980M , SSM9985GM , SSM9987GH , SSM9987GM , SSN1N45BBU .

History: SSP7480N | SSN65R360S2 | IPP05CN10LG | IRL3803PBF | WTC4501

 

 
Back to Top

 


 
.