IRLR120N Todos los transistores

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IRLR120N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR120N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 39 W

Tensión drenaje-fuente (Vds): 100 V

Corriente continua de drenaje (Id): 11 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.185 Ohm

Empaquetado / Estuche: TO252AA

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IRLR120N Datasheet (PDF)

1.1. irlr120n.pdf Size:173K _international_rectifier

IRLR120N
IRLR120N

PD - 91541B IRLR/U120N HEXFET Power MOSFET Surface Mount (IRLR120N) D Straight Lead (IRLU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.185? Fully Avalanche Rated G Description ID = 10A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This be

3.1. irlr120pbf irlu120pbf.pdf Size:1838K _international_rectifier

IRLR120N
IRLR120N

PD- 95382A IRLR120PbF IRLU120PbF Lead-Free 12/07/04 Document Number: 91324 www.vishay.com 1 IRLR/U120PbF Document Number: 91324 www.vishay.com 2 IRLR/U120PbF Document Number: 91324 www.vishay.com 3 IRLR/U120PbF Document Number: 91324 www.vishay.com 4 IRLR/U120PbF Document Number: 91324 www.vishay.com 5 IRLR/U120PbF Document Number: 91324 www.vishay.com 6 IRLR/U120PbF

3.2. irlr120.pdf Size:178K _international_rectifier

IRLR120N
IRLR120N

3.3. irlr120a.pdf Size:808K _samsung

IRLR120N
IRLR120N

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.22 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.176 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris

3.4. irlr120 irlu120 sihlr120 sihlu120.pdf Size:2396K _vishay

IRLR120N
IRLR120N

IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) (?)VGS = 5.0 V 0.27 Dynamic dV/dt Rating Qg (Max.) (nC) 12 Repetitive Avalanche Rated Surface Mount (IRLR120, SiHLR120) Qgs (nC) 3.0 Straight Lead (IRLU120, SiHLU120) Qgd (nC) 7.1 Available in Tape and Reel C

Otros transistores... IRLR014 , IRLR014A , IRLR020 , IRLR024 , IRLR024A , IRLR024N , IRLR110A , IRLR120A , IRF640N , IRLR130A , IRLR210A , IRLR220A , IRLR230A , IRLR2703 , IRLR2705 , IRLR2905 , IRLR3103 .

 


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Introduzca al menos 1 números o letras