IRLR230A Todos los transistores

 

IRLR230A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR230A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 48 W

Tensión drenaje-fuente (Vds): 200 V

Corriente continua de drenaje (Id): 7.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 580 pF

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: DPAK

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IRLR230A Datasheet (PDF)

1.1. irlr230a irlu230a.pdf Size:230K _fairchild_semi

IRLR230A
IRLR230A

IRLR/U230A FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology RDS(on) = 0.4Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 7.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK I-PAK ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings

1.2. irlr230a.pdf Size:907K _samsung

IRLR230A
IRLR230A

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.335 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

 5.1. irlr210a irlu210a.pdf Size:232K _fairchild_semi

IRLR230A
IRLR230A

IRLR/U210A FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology RDS(on) = 1.5Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 2.7 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK I-PAK ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 1.185Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings

5.2. irlu2905zpbf irlr2905zpbf.pdf Size:328K _international_rectifier

IRLR230A
IRLR230A

PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET® Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175°C Operating Temperature RDS(on) = 13.5mΩ Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extrem

 5.3. irlr2703.pdf Size:210K _international_rectifier

IRLR230A
IRLR230A

PD- 9.1335B IRLR/U2703 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 30V Surface Mount (IRLR2703) Straight Lead (IRLU2703) RDS(on) = 0.045? G Advanced Process Technology Fast Switching ID = 23A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie

5.4. irlr2905pbf irlu2905pbf.pdf Size:314K _international_rectifier

IRLR230A
IRLR230A

PD- 95084A IRLR/U2905PbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR2905) VDSS = 55V l Straight Lead (IRLU2905) l Advanced Process Technology RDS(on) = 0.027Ω l Fast Switching G l Fully Avalanche Rated ID = 42A… l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t

 5.5. irlr2908.pdf Size:206K _international_rectifier

IRLR230A
IRLR230A

PD - 94501 IRLR2908 AUTOMOTIVE MOSFET IRLU2908 HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 80V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175C Operating Temperature RDS(on) = 28m? l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 30A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET util

5.6. irlr2908pbf irlu2908pbf.pdf Size:335K _international_rectifier

IRLR230A
IRLR230A

PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET® Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 80V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 28mΩ Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 30A S Description This HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve

5.7. irlr2705.pdf Size:162K _international_rectifier

IRLR230A
IRLR230A

PD- 9.1317B IRLR/U2705 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2705) Straight Lead (IRLU2705) RDS(on) = 0.040? G Advanced Process Technology Fast Switching ID = 28A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie

5.8. irlu2703pbf irlr2703pbf.pdf Size:313K _international_rectifier

IRLR230A
IRLR230A

PD- 95083A IRLR/U2703PbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D VDSS = 30V l Surface Mount (IRLR2703) l Straight Lead (IRLU2703) l Advanced Process Technology RDS(on) = 0.045Ω G l Fast Switching l Fully Avalanche Rated ID = 23A… S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te

5.9. irlr2905.pdf Size:135K _international_rectifier

IRLR230A
IRLR230A

PD- 91334E IRLR/U2905 HEXFET Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2905) Straight Lead (IRLU2905) RDS(on) = 0.027? G Advanced Process Technology Fast Switching ID = 42A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

5.10. irlu2705pbf irlr2705pbf.pdf Size:260K _international_rectifier

IRLR230A
IRLR230A

PD - 95062A IRLR2705PbF IRLU2705PbF l Logic-Level Gate Drive HEXFET® Power MOSFET l Ultra Low On-Resistance D l Surface Mount (IRLR2705) VDSS = 55V l Straight Lead (IRLU2705) l Advanced Process Technology l Fast Switching RDS(on) = 0.040Ω G l Fully Avalanche Rated l Lead-Free ID = 28A… S Description Fifth Generation HEXFETs from International Rectifier utilize advanced p

5.11. irlr210a.pdf Size:884K _samsung

IRLR230A
IRLR230A

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 1.185 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

5.12. irlr220a.pdf Size:904K _samsung

IRLR230A
IRLR230A

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.609 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

Otros transistores... IRLR024A , IRLR024N , IRLR110A , IRLR120A , IRLR120N , IRLR130A , IRLR210A , IRLR220A , IRF460 , IRLR2703 , IRLR2705 , IRLR2905 , IRLR3103 , IRLR3303 , IRLR3410 , IRLS510A , IRLS520A .

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