AFN1012 Todos los transistores

 

AFN1012 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN1012
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
   Paquete / Cubierta: SOT-523
 

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AFN1012 Datasheet (PDF)

 ..1. Size:585K  alfa-mos
 afn1012.pdf pdf_icon

AFN1012

AFN1012 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1012, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low L

 0.1. Size:587K  alfa-mos
 afn1012e.pdf pdf_icon

AFN1012

AFN1012E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1012E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low

 9.1. Size:608K  alfa-mos
 afn1024.pdf pdf_icon

AFN1012

AFN1024 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low L

 9.2. Size:560K  alfa-mos
 afn1032.pdf pdf_icon

AFN1012

AFN1032 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1032, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/0.5A,RDS(ON)=500m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low L

MOSTRAR MÁS

Otros transistores... AFN04N60T220T , AFN04N60T251T , AFN06N60T220FT , AFN06N60T251T , AFN07N65T220FT , AFN07N65T220T , AFN08N50T220FT , AFN08N50T220T , AO3401 , AFN1012E , AFN1024 , AFN1024E , AFN1032 , AFN1034 , AFN1072 , AFN10N60T220FT , AFN10N60T220T .

History: QM3003K | AUIRFS4310TRL | MTNK5C3 | HM7N80 | FDN359BNF095 | 12N80G-TA3-T

 

 
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