IRLR3103 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLR3103
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 107 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 210 nS
   Cossⓘ - Capacitancia de salida: 640 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET IRLR3103

IRLR3103 Datasheet (PDF)

..1. Size:286K international rectifier
irlu3103pbf irlr3103pbf.pdf

PD - 95085AIRLR/U3103PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR3103)VDSS = 30Vl Straight Lead (IRLU3103)l Advanced Process TechnologyRDS(on) = 0.019l Fast SwitchingGl Fully Avalanche RatedID = 55Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

..2. Size:204K international rectifier
irlr3103.pdf

PD - 91333EIRLR/U3103HEXFET Power MOSFET Logic-Level Gate DriveD Ultra Low On-ResistanceVDSS = 30V Surface Mount (IRLR3103) Straight Lead (IRLU3103)RDS(on) = 0.019 Advanced Process TechnologyG Fast SwitchingID = 55A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve the

..3. Size:286K infineon
irlr3103pbf irlu3103pbf.pdf

..4. Size:242K inchange semiconductor
irlr3103.pdf

isc N-Channel MOSFET Transistor IRLR3103, IIRLR3103FEATURESStatic drain-source on-resistance:RDS(on)19mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV Gate-

7.1. Size:322K international rectifier
irlr3105pbf irlu3105pbf.pdf

PD - 95553BIRLR3105PbFIRLU3105PbFHEXFET Power MOSFETFeatures Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating Temperature Fast Switching RDS(on) = 0.037G Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 25ASDescriptionThis HEXFET Power MOSFET utilizes the latest processingtechniques to achie

7.2. Size:185K international rectifier
irlr3105.pdf

PD - 94510BIRLR3105AUTOMOTIVE MOSFETIRLU3105HEXFET Power MOSFETFeaturesDl Logic-Level Gate DriveVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 0.037l 175C Operating TemperatureGl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxID = 25ASDescriptionSpecifically designed for Automotive applications, this HEXFET Power

7.3. Size:619K international rectifier
auirlr3105.pdf

PD - 97703AAUTOMOTIVE GRADEAUIRLR3105FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Logic-Level Gate DriveDV(BR)DSS55V Dynamic dV/dT Ratingl Low On-ResistanceRDS(on) typ.30ml 175C Operating TemperatureG max 37ml Fast Switchingl Fully Avalanche RatedSID25Al Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS CompliantDl A

7.4. Size:322K infineon
irlr3105pbf irlu3105pbf.pdf

7.5. Size:796K cn vbsemi
irlr3105tr.pdf

IRLR3105TRwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

7.6. Size:241K inchange semiconductor
irlr3105.pdf

isc N-Channel MOSFET Transistor IRLR3105, IIRLR3105FEATURESStatic drain-source on-resistance:RDS(on)37mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

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