AFN1330S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN1330S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.225 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.115 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 10 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm

Encapsulados: SOT-323

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AFN1330S datasheet

 ..1. Size:270K  alfa-mos
 afn1330s.pdf pdf_icon

AFN1330S

AFN1330S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1330S, N-Channel enhancement mode 60V/0.5A , RDS(ON)=7.5 @VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.05A , R DS(ON)=7.5 @VGS=5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 9.1. Size:592K  alfa-mos
 afn1304.pdf pdf_icon

AFN1330S

AFN1304 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1304, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=680m @VGS=1.8V These devices are particularly suited for low S

 9.2. Size:799K  alfa-mos
 afn1306.pdf pdf_icon

AFN1330S

AFN1306 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1306, N-Channel enhancement mode 30V/1.5A,RDS(ON)=430m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/1.2A,RDS(ON)=580m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.6A,RDS(ON)=860m @VGS=1.8V These devices are particularly suited for low S

 9.3. Size:593K  alfa-mos
 afn1304e.pdf pdf_icon

AFN1330S

AFN1304E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1304E, N-Channel enhancement mode 20V/1.8A,RDS(ON)=400m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=500m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=680m @VGS=1.8V These devices are particularly suited for low

MOSTRAR MÁS

Otros transistores... AFN10N65T220T, AFN12N60T220FT, AFN12N60T220T, AFN12N65T220FT, AFN12N65T220T, AFN1304, AFN1304E, AFN1306, AOD4184A, AFN1443, AFN1501S, AFN1510S, AFN1520, AFN1530, AFN1912, AFN1912E, AFN1932