AFN2302S Todos los transistores

 

AFN2302S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN2302S
   Código: 2S*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.25 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 3.6 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 5.4 nC
   Tiempo de subida (tr): 36 nS
   Conductancia de drenaje-sustrato (Cd): 115 pF
   Resistencia entre drenaje y fuente RDS(on): 0.085 Ohm
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de MOSFET AFN2302S

 

AFN2302S Datasheet (PDF)

 ..1. Size:520K  alfa-mos
afn2302s.pdf

AFN2302S
AFN2302S

AFN2302S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=100m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 7.1. Size:652K  alfa-mos
afn2302as.pdf

AFN2302S
AFN2302S

AFN2302AS Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=110m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 8.1. Size:721K  alfa-mos
afn2306ae.pdf

AFN2302S
AFN2302S

AFN2306AE Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low

 8.2. Size:476K  alfa-mos
afn2304s.pdf

AFN2302S
AFN2302S

AFN2304S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.3. Size:608K  alfa-mos
afn2304as.pdf

AFN2302S
AFN2302S

AFN2304AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 8.4. Size:719K  alfa-mos
afn2306a.pdf

AFN2302S
AFN2302S

AFN2306A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low

 8.5. Size:484K  alfa-mos
afn2308.pdf

AFN2302S
AFN2302S

AFN2308 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308, N-Channel enhancement mode 60V/3.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=140m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.6. Size:616K  alfa-mos
afn2308a.pdf

AFN2302S
AFN2302S

AFN2308A Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308A, N-Channel enhancement mode 60V/2.8A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.0A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 8.7. Size:563K  alfa-mos
afn2304.pdf

AFN2302S
AFN2302S

AFN2304 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.8A,RDS(ON)=105m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.8. Size:604K  alfa-mos
afn2304a.pdf

AFN2302S
AFN2302S

AFN2304A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

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