AFN2308 Todos los transistores

 

AFN2308 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN2308
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SOT-23
 

 Búsqueda de reemplazo de AFN2308 MOSFET

   - Selección ⓘ de transistores por parámetros

 

AFN2308 Datasheet (PDF)

 ..1. Size:484K  alfa-mos
 afn2308.pdf pdf_icon

AFN2308

AFN2308 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308, N-Channel enhancement mode 60V/3.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=140m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 0.1. Size:616K  alfa-mos
 afn2308a.pdf pdf_icon

AFN2308

AFN2308A Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308A, N-Channel enhancement mode 60V/2.8A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.0A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 8.1. Size:721K  alfa-mos
 afn2306ae.pdf pdf_icon

AFN2308

AFN2306AE Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low

 8.2. Size:476K  alfa-mos
 afn2304s.pdf pdf_icon

AFN2308

AFN2304S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

MOSTRAR MÁS

Otros transistores... AFN2302AS , AFN2302S , AFN2304 , AFN2304A , AFN2304AS , AFN2304S , AFN2306A , AFN2306AE , IRFP260N , AFN2308A , AFN2312 , AFN2312A , AFN2318 , AFN2318A , AFN2324 , AFN2324A , AFN2330 .

History: AOI4286 | BUK9E4R4-40B | GSM6236S | OSG60R070PT3ZF | NP82N055KHE | IXFL39N90 | 2N4220A

 

 
Back to Top

 


 
.