AFN2330 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFN2330 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 90 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 22 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Encapsulados: SOT-23
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AFN2330 datasheet
..1. Size:546K alfa-mos
afn2330.pdf 
AFN2330 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2330, N-Channel enhancement mode 90V/2.8A,RDS(ON)=190m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=200m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
0.1. Size:678K alfa-mos
afn2330a.pdf
AFN2330A Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
8.1. Size:694K alfa-mos
afn2336a.pdf
AFN2336A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/1.5A,RDS(ON)=480m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.5A,RDS(ON)=900m @VGS=1.8V These devices are particularly suited for low
9.1. Size:721K alfa-mos
afn2306ae.pdf
AFN2306AE Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m @VGS=1.8V These devices are particularly suited for low
9.2. Size:552K alfa-mos
afn2354.pdf
AFN2354 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2354, N-Channel enhancement mode 100V/3.2A,RDS(ON)=145m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/2.6A,RDS(ON)=160m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.3. Size:546K alfa-mos
afn2324.pdf
AFN2324 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2324, N-Channel enhancement mode 100V/2.3A,RDS(ON)=285m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=295m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.4. Size:559K alfa-mos
afn2376.pdf
AFN2376 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2376, N-Channel enhancement mode 60V/3.6A,RDS(ON)=70m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=78m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
9.5. Size:476K alfa-mos
afn2304s.pdf
AFN2304S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=85m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
9.6. Size:608K alfa-mos
afn2304as.pdf
AFN2304AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.7. Size:719K alfa-mos
afn2306a.pdf
AFN2306A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m @VGS=1.8V These devices are particularly suited for low
9.8. Size:484K alfa-mos
afn2308.pdf
AFN2308 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308, N-Channel enhancement mode 60V/3.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=140m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
9.9. Size:616K alfa-mos
afn2308a.pdf
AFN2308A Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308A, N-Channel enhancement mode 60V/2.8A,RDS(ON)=135m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.0A,RDS(ON)=145m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.10. Size:678K alfa-mos
afn2324a.pdf
AFN2324A Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2324A, N-Channel enhancement mode 100V/2.3A,RDS(ON)=310m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=320m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit
9.11. Size:652K alfa-mos
afn2302as.pdf
AFN2302AS Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=110m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite
9.12. Size:268K alfa-mos
afn2318.pdf
AFN2318 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318, N-Channel enhancement mode 40V/3.6A,RDS(ON)= 60m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.8A,RDS(ON)= 80m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
9.13. Size:563K alfa-mos
afn2304.pdf
AFN2304 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.8A,RDS(ON)=105m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
9.14. Size:549K alfa-mos
afn2312.pdf
AFN2312 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=40m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m @VGS=1.8V These devices are particularly suited for low Supe
9.15. Size:604K alfa-mos
afn2304a.pdf
AFN2304A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f
9.16. Size:400K alfa-mos
afn2318a.pdf
AFN2318A Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)= 68m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.2A,RDS(ON)= 88m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.17. Size:681K alfa-mos
afn2312a.pdf
AFN2312A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.2A,RDS(ON)=48m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m @VGS=1.8V These devices are particularly suited for low Su
9.18. Size:520K alfa-mos
afn2302s.pdf
AFN2302S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=100m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
Otros transistores... AFN2308, AFN2308A, AFN2312, AFN2312A, AFN2318, AFN2318A, AFN2324, AFN2324A, AON6414A, AFN2330A, AFN2336A, AFN2354, AFN2376, AFN2604, AFN2912W, AFN3006S, AFN3009S
