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AFN3400AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN3400AS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm
   Paquete / Cubierta: SOT-23
 

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AFN3400AS Datasheet (PDF)

 ..1. Size:682K  alfa-mos
 afn3400as.pdf pdf_icon

AFN3400AS

AFN3400AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=46m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=58m@VGS=2.5V These devices are particularly suited for low 3

 6.1. Size:710K  alfa-mos
 afn3400a.pdf pdf_icon

AFN3400AS

AFN3400A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m@VGS=2.5V These devices are particularly suited for low 30V

 7.1. Size:578K  alfa-mos
 afn3400.pdf pdf_icon

AFN3400AS

AFN3400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.8A,RDS(ON)=58m@VGS=2.5V These devices are particularly suited for low Super

 7.2. Size:550K  alfa-mos
 afn3400s.pdf pdf_icon

AFN3400AS

AFN3400S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=44m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.6A,RDS(ON)=50m@VGS=2.5V These devices are particularly suited for low Sup

MOSTRAR MÁS

Otros transistores... AFN3030 , AFN3302W , AFN3306WS , AFN3309WS , AFN3310W , AFN3316W , AFN3400 , AFN3400A , SPP20N60C3 , AFN3400S , AFN3402 , AFN3402A , AFN3404 , AFN3406 , AFN3406A , AFN3406AS , AFN3406S .

History: PMCM6501UNE | MPSA65M810 | FQB4N25TM | NX6020CAKS | IPP80N04S2L-03 | IPI80N04S4L-04 | IPP70N10S3L-12

 

 
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