AFN3404 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN3404  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SOT-23

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AFN3404 datasheet

 ..1. Size:562K  alfa-mos
 afn3404.pdf pdf_icon

AFN3404

AFN3404 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3404, N-Channel enhancement mode 30V/4.0A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.2A,RDS(ON)=34m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 0.1. Size:849K  cn vbsemi
 afn3404s23rg.pdf pdf_icon

AFN3404

AFN3404S23RG www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23

 8.1. Size:578K  alfa-mos
 afn3400.pdf pdf_icon

AFN3404

AFN3400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.8A,RDS(ON)=58m @VGS=2.5V These devices are particularly suited for low Super

 8.2. Size:710K  alfa-mos
 afn3406as.pdf pdf_icon

AFN3404

AFN3406AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.4A,RDS(ON)=55m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

MOSTRAR MÁS

Otros transistores... AFN3310W, AFN3316W, AFN3400, AFN3400A, AFN3400AS, AFN3400S, AFN3402, AFN3402A, 12N60, AFN3406, AFN3406A, AFN3406AS, AFN3406S, AFN3410, AFN3414, AFN3414A, AFN3414S