AFN3406S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN3406S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SOT-23

  📄📄 Copiar 

 Búsqueda de reemplazo de AFN3406S MOSFET

- Selecciónⓘ de transistores por parámetros

 

AFN3406S datasheet

 ..1. Size:578K  alfa-mos
 afn3406s.pdf pdf_icon

AFN3406S

AFN3406S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 7.1. Size:710K  alfa-mos
 afn3406as.pdf pdf_icon

AFN3406S

AFN3406AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.4A,RDS(ON)=55m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 7.2. Size:710K  alfa-mos
 afn3406a.pdf pdf_icon

AFN3406S

AFN3406A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 7.3. Size:578K  alfa-mos
 afn3406.pdf pdf_icon

AFN3406S

AFN3406 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

MOSTRAR MÁS

Otros transistores... AFN3400AS, AFN3400S, AFN3402, AFN3402A, AFN3404, AFN3406, AFN3406A, AFN3406AS, AON6380, AFN3410, AFN3414, AFN3414A, AFN3414S, AFN3416, AFN3424, AFN3424A, AFN3426