AFN3430W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AFN3430W
   Código: 43*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 2 W
   Voltaje máximo drenador - fuente |Vds|: 90 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 4 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 15 nS
   Conductancia de drenaje-sustrato (Cd): 90 pF
   Resistencia entre drenaje y fuente RDS(on): 0.15 Ohm
   Paquete / Cubierta: TSOP-6

Búsqueda de reemplazo de MOSFET AFN3430W

AFN3430W Datasheet (PDF)

..1. Size:560K alfa-mos
afn3430w.pdf

AFN3430W Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3430W, N-Channel enhancement mode 90V/4.0A,RDS(ON)=150m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/3.2A,RDS(ON)=155m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

8.1. Size:575K alfa-mos
afn3432.pdf

AFN3432 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3432, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=80m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m@VGS=2.5V These devices are particularly suited for low Supe

8.2. Size:575K alfa-mos
afn3436.pdf

AFN3436 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3436, N-Channel enhancement mode 30V/3.6A,RDS(ON)=72m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=82m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=160m@VGS=2.5V These devices are particularly suited for low Supe

9.1. Size:578K alfa-mos
afn3400.pdf

AFN3400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.8A,RDS(ON)=58m@VGS=2.5V These devices are particularly suited for low Super

9.2. Size:710K alfa-mos
afn3406as.pdf

AFN3406AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.4A,RDS(ON)=55m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

9.3. Size:579K alfa-mos
afn3446.pdf

AFN3446 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3446, N-Channel enhancement mode 20V/4.0A,RDS(ON)=58m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.6A,RDS(ON)=68m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=88m@VGS=1.8V These devices are particularly suited for low Supe

9.4. Size:550K alfa-mos
afn3400s.pdf

AFN3400S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=44m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.6A,RDS(ON)=50m@VGS=2.5V These devices are particularly suited for low Sup

9.5. Size:563K alfa-mos
afn3424.pdf

AFN3424 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3424, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=155m@VGS=2.5V These devices are particularly suited for low Supe

9.6. Size:710K alfa-mos
afn3406a.pdf

AFN3406A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

9.7. Size:604K alfa-mos
afn3402a.pdf

AFN3402A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3402A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=87m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=110m@VGS=2.5V These devices are particularly suited for low Su

9.8. Size:570K alfa-mos
afn3458.pdf

AFN3458 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=66m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

9.9. Size:576K alfa-mos
afn3466.pdf

AFN3466 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3466, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.8A,RDS(ON)=105m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

9.10. Size:578K alfa-mos
afn3406.pdf

AFN3406 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

9.11. Size:568K alfa-mos
afn3414.pdf

AFN3414 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414, N-Channel enhancement mode 20V/3.6A,RDS(ON)=58m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=68m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=88m@VGS=1.8V These devices are particularly suited for low Supe

9.12. Size:682K alfa-mos
afn3400as.pdf

AFN3400AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=46m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=58m@VGS=2.5V These devices are particularly suited for low 3

9.13. Size:554K alfa-mos
afn3416.pdf

AFN3416 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3416, N-Channel enhancement mode 20V/4.0A,RDS(ON)=26m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=30m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=36m@VGS=1.8V These devices are particularly suited for low Supe

9.14. Size:853K alfa-mos
afn3484s.pdf

AFN3484S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3484S, N-Channel enhancement mode 30V/30A,RDS(ON)=13m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/18A,RDS(ON)=18m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

9.15. Size:574K alfa-mos
afn3452.pdf

AFN3452 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3452, N-Channel enhancement mode 30V/5.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.2A,RDS(ON)=52m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=58m@VGS=2.5V These devices are particularly suited for low Super

9.16. Size:278K alfa-mos
afn3454.pdf

AFN3454 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3480, N-Channel enhancement mode 40V/5.6A,RDS(ON)= 54m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)= 74m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

9.17. Size:739K alfa-mos
afn3484.pdf

AFN3484 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3484, N-Channel enhancement mode 30V/12A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=18m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

9.18. Size:560K alfa-mos
afn3426.pdf

AFN3426 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3426, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=40m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m@VGS=1.8V These devices are particularly suited for low Supe

9.19. Size:578K alfa-mos
afn3406s.pdf

AFN3406S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

9.20. Size:574K alfa-mos
afn3456.pdf

AFN3456 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3456, N-Channel enhancement mode 30V/5.6A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.2A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

9.21. Size:604K alfa-mos
afn3424a.pdf

AFN3424A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3424A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=85m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=95m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=265m@VGS=2.5V These devices are particularly suited for low Su

9.22. Size:700K alfa-mos
afn3414a.pdf

AFN3414A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414A, N-Channel enhancement mode 20V/2.4A,RDS(ON)=70m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=80m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for low S

9.23. Size:710K alfa-mos
afn3400a.pdf

AFN3400A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m@VGS=2.5V These devices are particularly suited for low 30V

9.24. Size:498K alfa-mos
afn3458bw.pdf

AFN3458BW Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458BW, N-Channel enhancement mode 60V/5.6A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

9.25. Size:521K alfa-mos
afn3414s.pdf

AFN3414S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414S, N-Channel enhancement mode 20V/4.0A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.4A,RDS(ON)=60m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=105m@VGS=1.8V These devices are particularly suited for low S

9.26. Size:566K alfa-mos
afn3460.pdf

AFN3460 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3460, N-Channel enhancement mode 20V/5.8A,RDS(ON)=26m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.2A,RDS(ON)=30m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=36m@VGS=1.8V These devices are particularly suited for low Supe

9.27. Size:574K alfa-mos
afn3410.pdf

AFN3410 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3410, N-Channel enhancement mode 30V/6.0A,RDS(ON)=27m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.5A,RDS(ON)=30m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

9.28. Size:677K alfa-mos
afn3456s.pdf

AFN3456S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3456S, N-Channel enhancement mode 30V/5.4A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.8A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

9.29. Size:563K alfa-mos
afn3402.pdf

AFN3402 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3402, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=80m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m@VGS=2.5V These devices are particularly suited for low Supe

9.30. Size:562K alfa-mos
afn3404.pdf

AFN3404 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3404, N-Channel enhancement mode 30V/4.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.2A,RDS(ON)=34m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

9.31. Size:849K cn vbsemi
afn3404s23rg.pdf

AFN3404S23RGwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23

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