AFN3446 Datasheet. Equivalente

 ..1. Size:579K  alfa-mos
 afn3446.pdf

AFN3446 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3446, N-Channel enhancement mode 20V/4.0A,RDS(ON)=58m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.6A,RDS(ON)=68m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=88m @VGS=1.8V These devices are particularly suited for low Supe

 9.1. Size:578K  alfa-mos
 afn3400.pdf

AFN3400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.8A,RDS(ON)=58m @VGS=2.5V These devices are particularly suited for low Super

 9.2. Size:710K  alfa-mos
 afn3406as.pdf

AFN3406AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.4A,RDS(ON)=55m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.3. Size:550K  alfa-mos
 afn3400s.pdf

AFN3400S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=44m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.6A,RDS(ON)=50m @VGS=2.5V These devices are particularly suited for low Sup

 9.4. Size:563K  alfa-mos
 afn3424.pdf

AFN3424 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3424, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=85m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=155m @VGS=2.5V These devices are particularly suited for low Supe

 9.5. Size:560K  alfa-mos
 afn3430w.pdf

AFN3430W Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3430W, N-Channel enhancement mode 90V/4.0A,RDS(ON)=150m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/3.2A,RDS(ON)=155m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.6. Size:710K  alfa-mos
 afn3406a.pdf

AFN3406A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.7. Size:604K  alfa-mos
 afn3402a.pdf

AFN3402A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3402A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=82m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=87m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=110m @VGS=2.5V These devices are particularly suited for low Su

 9.8. Size:570K  alfa-mos
 afn3458.pdf

AFN3458 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=66m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.9. Size:576K  alfa-mos
 afn3466.pdf

AFN3466 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3466, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.8A,RDS(ON)=105m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.10. Size:578K  alfa-mos
 afn3406.pdf

AFN3406 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.11. Size:568K  alfa-mos
 afn3414.pdf

AFN3414 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414, N-Channel enhancement mode 20V/3.6A,RDS(ON)=58m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=68m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=88m @VGS=1.8V These devices are particularly suited for low Supe

 9.12. Size:682K  alfa-mos
 afn3400as.pdf

AFN3400AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=46m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=58m @VGS=2.5V These devices are particularly suited for low 3

 9.13. Size:554K  alfa-mos
 afn3416.pdf

AFN3416 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3416, N-Channel enhancement mode 20V/4.0A,RDS(ON)=26m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=30m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=36m @VGS=1.8V These devices are particularly suited for low Supe

 9.14. Size:853K  alfa-mos
 afn3484s.pdf

AFN3484S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3484S, N-Channel enhancement mode 30V/30A,RDS(ON)=13m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/18A,RDS(ON)=18m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.15. Size:575K  alfa-mos
 afn3432.pdf

AFN3432 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3432, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=80m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m @VGS=2.5V These devices are particularly suited for low Supe

 9.16. Size:574K  alfa-mos
 afn3452.pdf

AFN3452 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3452, N-Channel enhancement mode 30V/5.6A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.2A,RDS(ON)=52m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=58m @VGS=2.5V These devices are particularly suited for low Super

 9.17. Size:278K  alfa-mos
 afn3454.pdf

AFN3454 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3480, N-Channel enhancement mode 40V/5.6A,RDS(ON)= 54m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)= 74m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.18. Size:739K  alfa-mos
 afn3484.pdf

AFN3484 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3484, N-Channel enhancement mode 30V/12A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=18m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.19. Size:560K  alfa-mos
 afn3426.pdf

AFN3426 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3426, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=40m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m @VGS=1.8V These devices are particularly suited for low Supe

 9.20. Size:578K  alfa-mos
 afn3406s.pdf

AFN3406S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.21. Size:574K  alfa-mos
 afn3456.pdf

AFN3456 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3456, N-Channel enhancement mode 30V/5.6A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.2A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.22. Size:604K  alfa-mos
 afn3424a.pdf

AFN3424A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3424A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=85m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=95m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=265m @VGS=2.5V These devices are particularly suited for low Su

 9.23. Size:700K  alfa-mos
 afn3414a.pdf

AFN3414A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414A, N-Channel enhancement mode 20V/2.4A,RDS(ON)=70m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=80m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=100m @VGS=1.8V These devices are particularly suited for low S

 9.24. Size:710K  alfa-mos
 afn3400a.pdf

AFN3400A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m @VGS=2.5V These devices are particularly suited for low 30V

 9.25. Size:498K  alfa-mos
 afn3458bw.pdf

AFN3458BW Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458BW, N-Channel enhancement mode 60V/5.6A,RDS(ON)=135m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=145m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 9.26. Size:521K  alfa-mos
 afn3414s.pdf

AFN3414S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414S, N-Channel enhancement mode 20V/4.0A,RDS(ON)=50m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.4A,RDS(ON)=60m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=105m @VGS=1.8V These devices are particularly suited for low S

 9.27. Size:566K  alfa-mos
 afn3460.pdf

AFN3460 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3460, N-Channel enhancement mode 20V/5.8A,RDS(ON)=26m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.2A,RDS(ON)=30m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=36m @VGS=1.8V These devices are particularly suited for low Supe

 9.28. Size:574K  alfa-mos
 afn3410.pdf

AFN3410 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3410, N-Channel enhancement mode 30V/6.0A,RDS(ON)=27m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.5A,RDS(ON)=30m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.29. Size:677K  alfa-mos
 afn3456s.pdf

AFN3456S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3456S, N-Channel enhancement mode 30V/5.4A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.8A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.30. Size:563K  alfa-mos
 afn3402.pdf

AFN3402 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3402, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=80m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m @VGS=2.5V These devices are particularly suited for low Supe

 9.31. Size:562K  alfa-mos
 afn3404.pdf

AFN3404 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3404, N-Channel enhancement mode 30V/4.0A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.2A,RDS(ON)=34m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.32. Size:575K  alfa-mos
 afn3436.pdf

AFN3436 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3436, N-Channel enhancement mode 30V/3.6A,RDS(ON)=72m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=82m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=160m @VGS=2.5V These devices are particularly suited for low Supe

 9.33. Size:849K  cn vbsemi
 afn3404s23rg.pdf

AFN3404S23RG www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23