AFN3456S Todos los transistores

 

AFN3456S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN3456S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TSOT-23-6L
 

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AFN3456S Datasheet (PDF)

 ..1. Size:677K  alfa-mos
 afn3456s.pdf pdf_icon

AFN3456S

AFN3456S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3456S, N-Channel enhancement mode 30V/5.4A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.8A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 7.1. Size:574K  alfa-mos
 afn3456.pdf pdf_icon

AFN3456S

AFN3456 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3456, N-Channel enhancement mode 30V/5.6A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.2A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.1. Size:570K  alfa-mos
 afn3458.pdf pdf_icon

AFN3456S

AFN3458 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=66m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.2. Size:574K  alfa-mos
 afn3452.pdf pdf_icon

AFN3456S

AFN3452 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3452, N-Channel enhancement mode 30V/5.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.2A,RDS(ON)=52m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=58m@VGS=2.5V These devices are particularly suited for low Super

MOSTRAR MÁS

Otros transistores... AFN3426 , AFN3430W , AFN3432 , AFN3436 , AFN3446 , AFN3452 , AFN3454 , AFN3456 , SKD502T , AFN3458 , AFN3458BW , AFN3460 , AFN3466 , AFN3484 , AFN3484S , AFN3606S , AFN3609S .

History: STU336S | 2SK664 | GP1M023A050N | STL90N3LLH6 | AP72T02GH | BL7N65A-U | AK12N65S

 

 
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