AFN3609S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AFN3609S Datasheet (PDF)

..1. Size:559K alfa-mos
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AFN3609S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3609S, N-Channel enhancement mode 30V/35A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=9m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

8.1. Size:601K alfa-mos
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AFN3606S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3606S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.0m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=6.5m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

9.1. Size:568K alfa-mos
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AFN3630 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3630, N-Channel enhancement mode 30V/20A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=38m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

9.2. Size:588K alfa-mos
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AFN3684S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3684S, N-Channel enhancement mode 30V/30A,RDS(ON)=9m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/18A,RDS(ON)=13m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l

Otros transistores... AFN3456S , AFN3458 , AFN3458BW , AFN3460 , AFN3466 , AFN3484 , AFN3484S , AFN3606S , AON6380 , AFN3630 , AFN3684S , AFN3806W , AFN3814W , AFN4048WS , AFN4102W , AFN4134 , AFN4134W .