IRLS640A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLS640A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 40 W
Voltaje máximo drenador - fuente |Vds|: 200 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 9.8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 40 nC
Tiempo de subida (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 200 pF
Resistencia entre drenaje y fuente RDS(on): 0.18 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET IRLS640A
IRLS640A Datasheet (PDF)
irls640a.pdf
IRLS640AAdvanced Power MOSFETFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9.8 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.145 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute M
irls640a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Logic Level Gate DriveRDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9.8 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.145 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rati
irls640a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
irls630a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Logic Level Gate DriveRDS(on) = 0.4 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 6.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.335 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratin
irls620a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Logic Level Gate DriveRDS(on) = 0.8 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 4.1 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.609 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings
irls610a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Logic Level Gate DriveRDS(on) = 1.5 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 2.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 1.185 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings
irls610a.pdf
isc N-Channel MOSFET Transistor IRLS610AFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
Otros transistores... IRLR3410 , IRLS510A , IRLS520A , IRLS530A , IRLS540A , IRLS610A , IRLS620A , IRLS630A , IRFB3306 , IRLSZ14A , IRLSZ24A , IRLSZ34A , IRLSZ44A , IRLU010 , IRLU014 , IRLU014A , IRLU020 .
