AFN4412W Todos los transistores

 

AFN4412W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN4412W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SOP-8P
 

 Búsqueda de reemplazo de AFN4412W MOSFET

   - Selección ⓘ de transistores por parámetros

 

AFN4412W Datasheet (PDF)

 ..1. Size:576K  alfa-mos
 afn4412w.pdf pdf_icon

AFN4412W

AFN4412W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4412W, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/ 6.2A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 7.1. Size:576K  alfa-mos
 afn4412.pdf pdf_icon

AFN4412W

AFN4412 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4412, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/ 6.2A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.1. Size:574K  alfa-mos
 afn4424.pdf pdf_icon

AFN4412W

AFN4424 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4424, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 36m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.2. Size:600K  alfa-mos
 afn4440w.pdf pdf_icon

AFN4412W

AFN4440W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4440W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

MOSTRAR MÁS

Otros transistores... AFN4172WS , AFN4210 , AFN4210W , AFN4214 , AFN4214W , AFN4228 , AFN4248W , AFN4412 , AO3407 , AFN4422 , AFN4424 , AFN4424W , AFN4440 , AFN4440W , AFN4486 , AFN4546 , AFN4634WS .

History: NCE40P40D | IPT007N06N | P2504EDG | IRF4104LPBF | SIHFPE50 | FDC6020C | IPT015N10N5

 

 
Back to Top

 


 
.