AFN6530S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AFN6530S
   Código: 6530S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 17 nC
   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 420 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
   Paquete / Cubierta: DFN5X6-8L

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AFN6530S Datasheet (PDF)

..1. Size:571K alfa-mos
afn6530s.pdf

AFN6530S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6530S, N-Channel enhancement mode 30V/15A,RDS(ON)=4.7m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=6.2m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

9.1. Size:579K alfa-mos
afn6562.pdf

AFN6562 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6562, N-Channel enhancement mode 30V/3.6A,RDS(ON)=70m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=78m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=95m@VGS=2.5V These devices are particularly suited for low Super

9.2. Size:549K alfa-mos
afn6520s.pdf

AFN6520S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6520S, N-Channel enhancement mode 30V/16A,RDS(ON)=7.6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=12.4m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

9.3. Size:579K alfa-mos
afn6561.pdf

AFN6561 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6561, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=102m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

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